http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : 노경재 (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
-
용액 공정 기반 NiO/ZnO계 자외선 센서용 재료 특성 연구
문성철,이지선,노경재,양성주,이성의,Moon, Seong-Cheol,Lee, Ji-Seon,No, Kyeong-Jae,Yang, Seong-Ju,Lee, Seong-Eui 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.8
Ultraviolet (UV) photodetectors are used in various industries and fields of research, including optical communication, flame sensing, missile plume detection, astronomical studies, biological sensors, and environmental research. However, general UV detectors that employ Schottky junction diodes and p-n junctions have high fabrication cost and low quantum efficiency. In this study, we investigated the characteristics of materials used to manufacture UV photodetectors in a low-cost solution process that requires easy fabrication of flexible substrates. We fabricated p-type NiO and n-type ZnO substrates with wide band gap by the sol-gel method and compared the characteristics of substrates prepared under different spin-coating and heat-treatment conditions.
-
Reactive Magnetron Sputtering 적용 CuN<sub>x</sub>-Cu-CuN<sub>x</sub> 적층형 Metal Mesh 터치센서 전극 특성 연구
김현석,양성주,노경재,이성의,Kim, Hyun-Seok,Yang, Seong-Ju,Noh, Kyeong-Jae,Lee, Seong-Eui 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.7
In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.
-
Reactive Magnetron Sputtering 적용 CuNx-Cu-CuNx 적층형 Metal Mesh 터치센서 전극 특성 연구
이성의,김현석,양성주,노경재 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.7
본 연구는 DC magnetron sputtering 장비를 사용하여 Ar 및 N2 gas의 분압비로 Cu 금속을 Reactive sputtering 공정을 통해 CuNx-Cu-CuNx 층을 In-situ 방법으로 일괄적으로 생성시킴으로써 공정상의 이점을 기대함과 동시에 외부 빛으로부터의 표면 반사율 감소 효과를 얻고자 하였다. CuNx layer 형성 시 gas 분압, DC Power, 증착 시간을 변수로 두고 두께 및 조성비에 따른 투과·반사율을 측정하였다. 즉 Ar:N2 gas ratio는 10:10(sccm), DC power 0.35 A, Deposition time 90 sec의 최적 조건을 도출 하였다. 또한 최적 두께 및 조성비에 따른 반사율을 측정하여 34%의 표면 반사율과 0.467의 △Ra 표면 Roughness 증가 값을 도출하였다. 투과·반사율로서 약 2.2 eV 정도의 CuNx band-gap energy를 도출하였으며, 가시광 영역의 파장대 빛을 최대한 흡수할 수 있는 두께 및 공정 조건을 확보 하였다. 이를 기반으로 Cu 금속을 사용하여 5 inch Metal mesh TSP(L/S:4/270 ㎛) 기준 모듈 구동 범위인 1.2 ㏀대의 선저항을 구현하였다. In the present study, the CuNx-Cu-CuNx layer the partial pressure ratio Cu metal of Ar and N2 gas using a DC magnetron sputtering device, was generated by the In-situ method. CuNx layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. CuNx layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. Ar:N2 gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of △ Ra surface roughness of 0.467. It was derived CuNx band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the 1.2 ㏀ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: 4/270 ㎛) is in the range of the reference operation.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
