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600 V급 Planar Field Stop IGBT 최적 설계 및 전기적 특성 분석에 관한 연구
남태진,정은식,강이구,Nam, Tae-Jin,Jung, Eun-Sik,Kang, Ey-Goo 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.4
IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.
Trench Gate를 이용한 Field Stop IGBT의 전기적 특성 분석에 관한 연구
남태진,정은식,정헌석,강이구,Nam, Tae-Jin,Jung, Eun-Sik,Chung, Hun-Suk,Kang, Ey-Goo 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.4
The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.
Al₂O₃ 게이트 절연막을 이용한 GaN Power MOSFET의 설계에 관한 연구
남태진,강이구,정헌석 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9
This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and 0.4 mΩcm²ultra low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage. 본 논문에서는 GaN 기반의 Normailly off FET을 구현하기 위해 GaN trench 전력 MOSFET의 구조를 제안하고 최적의 파라미터를 도출하여 계통 연계형 인버터에 사용되는 600 V급의 스위치소자를 설계하였다. 특히 제안한 소자의 게이트 절연막으로 Al2O3를 이용하여 설계하였으며, 최적의 파라미터를 도출하기 위하여 각 구조별 파라미터를 변화시키면서 시뮬레이션을 수행하였다. 수행한 결과 약 620 V의 항복전압과 0.4 mΩcm²의 온 저항 특성을 얻을 수가 있었다. 주지하는 바와 같이 600 V급의 전력 스위치 소자는 전기자동차, 계통연계형 인버터 등 다양한 산업분야에 사용되고 있기 때문에 열특성이 Si보다 월등히 우수한 GaN 기반의 전력 MOSFET 소자의 제안은 그동안 문제점으로 지적되어 온 p 접합을 극복하는 것으로서 제안된 소자는 다양한 분야에서 충분히 활용 가능할 것으로 판단된다.
남태진,강이구,Nam, Tae-Jin,Kang, Ey-Goo 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.5
This paper was carried about thermal analysis for high efficiency point contact solar cell. Therefore, we carried about 2-D device and process simulator according to design and process parameters. As a result of simulations, power transfer efficiency have decreased more increasing temperature. Especially, power transfer efficiency of room temperature have been showed 25%. The other hand, power transfer efficiency of 350 K kalvin temperature have been showed 20%. Therefore, we will considered design with thermal dissipation of device.
전력반도체 고내압 특성 향상을 위한 필드링 최적화 연구
남태진,정은식,김성종,정헌석,강이구,Nam, Tae-Jin,Jung, Eun-Sik,Jung, Hun-Suk,Kim, Sung-Jong,Kang, Ey-Goo 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.3
Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.
강이구,안병섭,남태진 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.4
In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.
강이구,안병섭,남태진,Kang, Ey-Goo,Ahn, Byoung-Sub,Nam, Tae-Jin 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.3
In this paper, the trench gate emitter switched thyristor(EST) withl trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The characteristics of the 1700 V forward blocking EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST. we carried out layout, design and process of EST devices.