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실리콘 및 갈륨비소 기판 위에 플라즈마 화학 증착한 텅스텐 박막의 성분 조사
김을진 三陟大學校 1996 論文集 Vol.29 No.3
Tungsten this films were deposited with tungsten-hexafluoride(WF?) and hydrogen(??) reactants by plasma enhanced chemical vapor deposition(PECVD) technique. The resistivities of tungsten thin films grown on Si and GaAs substrate are about 10μΩ-cm and 20μΩ-cm respectively, and the crystal structure of these films by X-ray diffration pattern are only α-phase tungsten(bcc structure). Compositional analyses of W/Si and W/GaAs structures are characterized by Electron Spectroscopy for Chemical Analysis (ESCA) method.
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RF 마그네트론 스퍼터링 방법으로 형성한 실리콘 산화막의 발광 특성 연구
홍종성,김을진 三陟大學校 産業科學技術硏究所 1999 産業科學技術硏究論文集 Vol.4 No.-
Visible photoluminescence (PL) of rf (radio frequency) magenetron-sputtered silicon-rich-silicon-oxide (SRSO) films have been studied. SRSO films were deposited by rf magnetron sputtering system of compound SiO₂target and Si slices. Thermal annealings were performed in a controlled N₂ atmosphere at temperature varying from 800˚C to 1100˚C for 10 min. Intense visible photoluminescence centered at 527 nm was observed at room temperature from SRSO films after they were annealed at about 1100˚C. As-deposited films show little or no visible photoluminescence. This photoluminescence is thought to be associated with the formation of nanocrystal silicon particles in the specially structured SiO₂layer.
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홍종성,김을진 三陟大學校 1998 論文集 Vol.31 No.3
Using a series of porous silicon (PS) sample - by rapid thermal annealing (2000℃, 3000℃, 4000℃, 5000℃) treatment - we have characterized their optical, electrical properties, and lattice mode properties by photoluminescence (PL), photoinduced current transient spectroscopy (PICTS), Fourier transform-infrared spectroscopy (FTIR) measurements. We found a visible photoluminescence peak at 665 nm and 670 nm by the annealing. We have carried out the PICTS measurements and found a deep levels of 0.69 eV, 0.76 eV, 0.84eV below the conduction band in the sample before annealing and after annealing at the 300℃. The effects of annealing on the photoluminescence spectrum and deep levels is discussed.
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