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RF 전력제한기용 실리콘 PIN 다이오드 패키지의 열적 거동 분석
백문철,김예빛,권봉준,조성배,정인용,하재권 한국물리학회 2023 새물리 Vol.73 No.6
In this study, we characterized the thermal behavior of a silicon PIN diode package used for a radio-frequency (RF) power limiter. The PIN diode was fabricated using a silicon process and designed to have a breakdown voltage of 250 V. A sequence of five RF pulses with a frequency of 2.7 GHz and a pulse width of 200 μs entered into the RF power limiter circuit, and the output power was measured. Then, the reflected and absorbed powers were respectively obtained using the scattering parameter (S-parameter) matrix. The absorption power proportion showed a slight decrease from 35% to 21.6% as the input power increased. Heat generation and temperature changes in the PIN diode package were analyzed by setting up a simple model and compared with the values actually measured by an infrared thermometer. The peak temperatures of the PIN diode package due to the heat absorbed by the RF pulses showed an almost linear increase when the RF input power increased from 30 to 59 dBm (1 to 810 W). The values calculated by the model matched well with the actual, measured ones within the error range. The temperature profiles of the package caused by input RF pulses were determined using the thermal time constant of the package material and showed a good match when the thermal time constant value was 3.2 ms.
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