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Sn-40Pb/Cu 및 Sn-3.0Ag-0.5Cu/Cu 접합부 계면반응 및 활성화에너지
김휘성,홍원식,박성훈,김광배,Kim, Whee-Sung,Hong, Won-Sik,Park, Sung-Hun,Kim, Kwang-Bae 한국재료학회 2007 한국재료학회지 Vol.17 No.8
In electronics manufacturing processes, soldering process has generally been used in surface mounting technology. Because of environmental restriction, lead free solders as like a SnAgCu ternary system are being used widely. After soldering process, the formation and growth of intermetalic compounds(IMCs) are formed in the interface between solder and Cu substrate as follows isothermal temperature and time. In this studies, therefore, we investigated the effects of the Cu substrate thickness on the IMC formation and growth of Sn-40Pb/Cu and Sn-3.0Ag-0.5Cu/Cu solder joints, respectively. The effect of the Cu thickness in PCB Cu pad and pure Cu plate was analyzed as measuring of thickness of each IMC. After solder was soldered on PCB and Cu plate which have different Cu thickness, we measured the IMC thickness in solder joints respectively. Also we compared with the effectiveness of Cu thickness on the IMC growth. From these results, we calculated the activation energy.
불활성 가스의 O₂와 CO 불순물 제거를 위한 Ni 촉매의 물성 평가
김광배(Kwangbae Kim),진새라(Saera Jin),김은석(Eunseok Kim),임예솔(Yesol Lim),이현준(Hyunjun Lee),김성훈(Seonghoon Kim),노윤영(Yunyoung Noh),송오성(Ohsung Song) 한국산학기술학회 2020 한국산학기술학회논문지 Vol.21 No.4
반도체 산업용 9N 이상의 초고순도 N₂, Ar 등 불활성 가스 제조를 위해 가스 정제공정에 사용되고 있는 Ni 촉매의 물성 평가 및 촉매적 특성을 확인하였다. 조성이 다른 원기둥 형태의 C1, 츄러스 형태의 C2의 두 가지 Ni 촉매에 대해 비교 평가를 진행하였다. Ni 촉매의 형상과 미세구조를 분석하기 위해 광학현미경과 FE-SEM을 이용하였으며, 조성 확인 및 물성을 분석하기 위해 EDS, XRD, 그리고 micro-Raman 분석을 이용하였다. 또한 Ni 촉매의 비표면적 및 촉매적 특성을 확인하기 위해 BET, Pulse Titration 분석을 진행하였다. 조성 분석결과, C1의 경우, 상대적으로 graphite가 불순물로 다량 포함되어 있는 것을 확인하였으며, C2는 C1에 비해 Ni의 함량이 높은 것을 확인하였다. 비표면적 분석 결과, C2의 비표면적이 C1보다 약 1.69배 정도 큰 것을 확인할 수 있었다. 촉매적 특성분석 결과, 상온에서 O₂와 CO 불순물 제거 정도가 C2가 우수함을 확인하였다. 따라서 반도체 산업용 초고순도 불활성 기체 제조를 위한 Ni 촉매로는 불순물이 적고, 비표면적이 크며, 상온에서 O₂와 CO 제거 성능이 우수한 C2가 적합함을 확인하였다. This study examined the catalytic property of Ni-catalyst used in the gas purifying process to manufacture inert gases of N2 and Ar with high-purity over 9N for semiconductor industrial applications. Two types of Ni-catalysts with a cylindrical shape (C1) and churros shape structure (C2) were compared for the assessment. Optical microscopy and FESEM were used to analyze the shape and microstructure of the Ni-catalyst. EDS, XRD, and micro-Raman characterization were performed to examine the composition and properties. BET and Pulse Titration analyses were conducted to check the surface area and catalytic property of the Ni-catalyst. From the composition analysis results, C1 contained a relatively large amount of graphite as an impurity, and C2 contained higher Ni contents than C1. From specific surface area analysis, the specific surface area of C2 was approximately 1.69 times larger than that of C1. From catalytic property analysis, outstanding performance in O₂ and CO impurity removal was observed at room temperature. Therefore, C2, having low-impurity and large specific surface area, is a suitable catalyst for the high-purity inert gas process in the semiconductor industry because of its outstanding performance in O₂ and CO impurity removal at room temperature.