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금동렬,박욱동,김기완,이우일 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
Tantalum pentoxide(Ta₂O₅) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of Ta₂O₅ films was 10-12 in oxygen mixing ratio of 10 %. The ratio of Ta:O was 1:2 and 1:2.49 by AES and RBS examination, respectively. The heat treatment at 700℃ in O₂ ambient led to induce crystallization. When the heat treatment temperature was increased to 1000℃, the dielectric constant was 20.5 in O₂ambient and 23 in N₂ ambient, respectively. This crystal structure was pseudo hexagonal of δ-Ta₂O₅ . The flat band voltage shift(ΔV_(FB)) of the specimens and the leakage current density were decreased with the mixng ratio of oxygen. The maximum breakdown field was 2.4 MV/cm in oxygen mixing ratio of 10 %. These Ta₂O₅ films will be applicable to hydrogen ion sensitive film and gate oxide material of memory device.