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Hot carrier 개선을 위한 N2 이온주입에 따른 MOSFET의 Digital/Analog 특성 분석
구태규(Taegyu Goo),한인식(Inshik Han),유욱상(Ooksang Yoo),주한수(Hansoo Joo),최원호(Wonho Choi),손영환(Younghwan Son),이정환(Jeonghwan Lee),강영석(Younseok Kang),임민규(Mingyu Lim),최성욱(Seongwook Chio),이가원(Gawon Lee),왕진석(Jinseok 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
In this paper, we investigated the performance and reliability of the device as formatting LDD(Lightly Doped Drain) with additional N₂ implant process. In case of the N₂ implantation, the TED(Transient Enhanced Diffusion) of boron is suppressed in channel regime and the drain current increased. But hot carrier lifetime is improved. Also, we investigated a change of the effective channel length using CP(Charge Pumping) current method and the analog performance is compared to evaluate DC gain and Rout according N₂ implantation. However, the N₂ implantation did not affect at analog performance. But the drain current at the normalized threshold voltage is degraded in digital performance. Therefore, we proved that the reliability can be improved without degrading Rout performance. The important Input/Output(IO) device in the analog performance is partially adapted for nano CMOS technology.