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RISS 인기검색어
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- 저자 : 盧在相 (검색결과 4 건)
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盧在相 弘益大學校 科學技術硏究所 1996 科學技術硏究論文集 Vol.7 No.1
MeV ion implantation has been recently employed in the field of CMOS retrograde well engineering. An issue on MeV ion induced damage is critical especially in forming a buried layer below the well. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. Si self-implantations were done to reveal the intrinsic behavior of secondary defect formations. Experimental results of B and P implantations were compared to those of Si case. TEM observations showed that interstitial type secondary defects are exclusively formed at around Rp. DCXRD rocking curve analyses indicated that an isolated layer of (+) strain is built up at around Rp after strain relaxation by annealing. SIMS anlayses showed that background impurities are gettered exactly at which secondary defects are formed. Gettering effieciency was found to be much related to the amount of stain field according to DCXRD analyses. A model experiment for the interaction between defects revealed that recombination of point defects with the opposite sign is responsible for defect annihilation instead of mass flow.
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초에너지 이온주입에 의한 초저접합 형성시 발생하는 Deactivation 현상에 관한 연구
盧在相,柳漢權 弘益大學校 科學基術硏究所 1999 科學技術硏究論文集 Vol.10 No.2
Semiconductor proces sing technologies have progressed toward ULSI(Ultra Large Scale Integration) regime to enhance packing density and operating speed and reduce power consumption. For these reasons, not only horizontal dimensions but also vertical dimensions will continue to be decreased to minimize short-channel effect such as punchthrough. Since an As ion has a rather high mass and low diffusivity during annealing, the formation of n??/p shallow junction is relatively easy. However, the formation of p??/n junction is difficult because a B ion is light and shows significant diffusion during annealing. Ultra shallow p??/n junction is formed by ULE(ultra low energy) implanter and RTA(Rapid Thermal Annealing). In this study deactivation phenomena was investigated according to various post-annealing condition after the formation of ultra shallow p??/n junction.
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핵생성 계면 제어에 의한 LPCVD 비정질 실리콘 박막의 고상 결정화를 이용한 조대한 다결정 실리콘 박막의 제조
盧在相 弘益大學校 科學技術硏究所 1997 科學技術硏究論文集 Vol.8 No.-
We report the critical role of the initial state of as-deposited amorphous silicon (a-Si) films near, or, at the a-Si/SiO₂ interface on the crystallization kinetics upon annealing. Grain size enhancement has been achieved by artificially modifying nucleation interface during deposition of LPCVD (low pressure chemical vapor deposition) a-Si films followed by solid phase crystallization (SPC). Since the deposition conditions change the incubation time, i,e. nucleation rate,and since nucleation occurs dominantly at a-Si/SiO₂ interface, we devised the following deposition techniques for the first time in order to obtain the larger grain size. A very thin a-Si layer (∼50Å) with the deposition conditions having long incubation time is grown first and then the reference films (∼950Å) are grown successively. Upon annealing the crystallization kinetics of composite films was observed to be determined only by the deposition conditions of a thin a-Si layer at the a-Si/SiO₂interface. Nucleation interface was also observed to be modified by interrupted gas supply resulting in the enhancement of the grain size.
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MeV ?? 자기 이온주입된 단결정 Silicon내의 결함 거동
許太薰,盧在相 弘益大學校 科學技術硏究所 1995 科學技術硏究論文集 Vol.6 No.-
In this study MeV Si? self ion implantations were done to reveal the intrinsic behaior of defect formation by excluding the possibility of chemical interactions between substrate atom and dopant atoms. Self implantation was conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characterristica in that the lattice damage is concentrated near R? and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of 1X10?/㎠. RBS channeled spectra showed that the depth at which as-implanted damaged layer formed increase as energy increase and that near surface region maintains better crystallinity as energy increase. Cross sectional TEM results agree well with RBS ones. In a TEM image as implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV Si? self implantation a critical dose of the secondary defect formation was found out to be between 3X10?/㎠ and 5X10?/㎠, upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.
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