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고주파 마그네트론 스퍼터링에 의한 $SrTiO_3$ 캐패시터 박막의 온도 의존성
오금곤,이우선,김남오,김재민,이병성,김상용,Oh, Gum-Kon,Lee, Woo-Sun,Kim, Nam-Oh,Kim, Jai-Min,Lee, Byung-Sung,Kim, Sang-Yong 대한전기학회 1999 전기학회논문지C Vol.48 No.6
The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.
김남오(Nam-Oh Kim),민완기(Wan-Ki Min),김병철(Byung-Chal Kim),오금곤(Gum-Kon Oh),이강연(Kang-Yeon Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.11
In this paper, a β-FeSi₂ films with thicknesses of about 5㎛ were deposited on n-type silicon(111) substrates by RF magnetron sputtering method using a FeSi₂ target(99.99%). The wafers were rotated at 10rpm with the FeSi₂ target, flow rate of argon of 50sccm, substrate temperature of 100℃, RF power of 60 watts, deposition time of 60 minutes, and the vacuum of 7.5×10?³ Torr. The annealing treatments of a β-FeSi₂ thin film were performed from 600, 800 and 900℃ for 12h in air ambient by an electric furnace. In order to investigate the surface morphology of β-FeSi₂ thin films were measured with a atomic force microscopy(AFM). The Hall effect measured at low temperatures.
김남오,민완기,김형곤,오금곤,현승철,Kim, Nam-oh,Min, Wan-Ki,Kim, Hyung-gon,Oh, Gum-kon,Hyun, Seung-cheol 대한전기학회 2004 전기학회논문지 P Vol.53 No.1
The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).
재폐로 동작에 따른 변압기형 SFCL과 저항형 SFCL의 특성 비교
최수근(Soo-Geun Choi),최효상(Hyo-Sang Choi),조용선(Yong-Sun Cho),박형민(Hyung-Min Park),정병익(Byung-Ik Jung),하경훈(Kyoung-Hun Ha),오금곤(Gum-Kon Oh),김덕구(Duk-Goo Kim),고성필(Sung-Pil Go) 한국조명·전기설비학회 2010 한국조명·전기설비학회 학술대회논문집 Vol.2010 No.9월
In this paper, we analyze the fault current limit and recovery characteristic of Resistive-type SFCL and Transformer-type according to reclosing operation. As the experimental conditions, we varied the tum's ratio between primary and secondary coils in transformer-type SFCL and twice opening times in the reclosing of circuit breaker were set as the 0.5 and 15 seconds, respectively. Under the equally applied voltage, we confirmed that the fault current limited by the SFCL was decreased by Transformer-type SFCL. Meanwhile, the recovery time of superconducting units in the transformer-type SFCL was shorter. By these results, we thought the recovery time of SFCL according to the reclosing operation confirm Transformer-type SFCL time rather than Resistive-type SFCL.
오금곤,정수복,조금배 조선대학교 동력자원연구소 1994 動力資源硏究所誌 Vol.16 No.1
In this paper, high frequency inverter of soft-switching PWM method is proposed to develop high efficiency inverter. The proposed inverter consists of a zero current switched series resonant converter. The output voltage is controlled by proper selection of switch modes by varying the duty ratio. The analysis gives the stable operating area for operation mode with very low switching losses as well as the steady state characteristics in each switch mode. The simulation results show the effectiveness of inverter system using soft-switching PWM method of high frequency resonant inverter.
Zn₄SnSe_(6):Co^(2+) 단결정의 물성에 관한 연구
이우선,오금곤,최창주,송찬일,김형곤 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2
In this paper, author describe the undoped and Co^(2+)-doped Zn₄SnSe_(6) single crystals were grown by the chemical transport reaction(CTR) method. For the crystal growth, the temperature gradient of the CTR furnace was kep a t 700℃ for the source aone and at 820℃ for the growth zone for 7-days. I t was found from the analysis of x-ray diffraction that undoped and Co^(2+)-doped Zn₄SnSe_(6) compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps.