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RISS 인기검색어
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- 저자 : Ö. Vural (검색결과 2 건)
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Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range
Ö. Vural,Y. S afak,S . Altındal,A. Türüt 한국물리학회 2010 Current Applied Physics Vol.10 No.3
The forward bias current–voltage (I–V) characteristics of Al/Rhodamine-101/n-GaAs structure have been investigated in the temperature range of 80–350 K. It has been seen a decrease in ideality factor (n) and an increase in the zero-bias barrier height (BH) with an increase in temperature. It has been seen that such a behavior of the BH and n obey Gaussian distribution of the BHs due to the BH inhomogeneities at the metal/semiconductor (MS) interface. The very strong temperature dependence of ideality factor of the structure has shown that the current processes occurring in the organic layer at the MS interface would be a possible candidate such as trap-charge limited conduction in determining the current at the intermediate and high bias regimes. Furthermore, it has been show that the Rh101 can be used to vary effective BHs for the metal/GaAs Schottky diodes. As a result, it has been determined that the BH value for conventional Al/n-GaAs SBD is remarkably higher than our own values of 0.68 eV obtained for the Al/Rh101/n-GaAs at 290 K.
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A. Kaya,Ö. Vural,H. Tecimer,S. Demirezen,S¸ . Altındal 한국물리학회 2014 Current Applied Physics Vol.14 No.3
Au/PVC þ TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant ( 3 0 , 3 00), loss tangent (tand), and the real and imaginary parts of the electric modulus (M0 , M00) and ac conductivity (sac) of this structure have been investigated in wide frequency a range of 1 kHze5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (Nss). The decrease in 3 0 and 3 00 with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M0 increase with increasing frequency and reach a maximum, M00 shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(sac) vs ln(u) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(sac) vs ln(u) plot indicated that there are three different conduction mechanisms in the Au/PVC þ TCNQ/p-Si structure at room temperature.
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