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Son, Ho-Jin,Han, Won-Sik,Wee, Kyung Ryang,Lee, Su-Hyun,Hwang, Ah-Reum,Kwon, Soonnam,Cho, Dae Won,Suh, Il-Hwan,Kang, Sang Ook The Royal Society of Chemistry 2009 Journal of materials chemistry Vol.19 No.47
<p>Two 2,5-bipyridyl substituted 1,1′-silanylene unit cyclized siloles with 1,1-silacyclopentyl- or 1,1-silacyclohexyl groups (<B>3-Cy5</B> and <B>3-Cy6</B>) were prepared from the intramolecular reductive cyclization of silacycloalkyl bis(phenylethynyl)silane with lithium naphthalenide and a a subsequent Pd-catalyzed cross-coupling reaction. Non-cyclized bipyridyl substituted dimethylsilole, 2,5-bis(2′,2′′-dipyridin-6-yl)-1,1-dimethyl-3,4-diphenylsilacyclopentadiene (<B>PyPySPyPy</B>), was also synthesized for comparison. All three siloles were characterized by X-ray structural studies. The results showed that the major contribution of three dimensional ordering found in crystal packing originated from distinctive intermolecular C–H⋯π interactions within the distance range 3.30–3.65 Å. Even higher ordering was apparent in the crystal packing due to the additional plane-to-plane packing interactions between the peripheral bipyridyl units in cyclized siloles, <B>3-Cy5</B> and <B>3-Cy6</B>. In accordance with such an increase in the peripheral intermolecular interactions, <B>3-Cy5</B> and <B>3-Cy6</B> exhibited higher <I>T</I><SUB>g</SUB> values (95 and 86 °C, respectively) than the acyclic analogue, <B>PyPySPyPy</B> (77 °C). In particular, <B>3-Cy5</B> showed a higher electron mobility of 6.9 × 10<SUP>−4</SUP> cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> at <I>E</I> = 0.581 MV cm<SUP>−1</SUP> in the solid films. As a result, enhanced OLED performance was observed when <B>3-Cy5</B> was used as an electron transporting layer in the multilayered device structure of ITO/PEDOT·PSS/NPB/Alq<SUB>3</SUB>/<B>3-Cy5</B>/LiF/Al, showing a maximum luminance of 17430 cd m<SUP>−2</SUP> at 11.5 V and a current efficiency of 4.52 cd A<SUP>−1</SUP> at 69.4 mA cm<SUP>−2</SUP> with a turn-on voltage of 2.6 V.</p> <P>Graphic Abstract</P><P>Cyclization of 1,1′-silanylene unit at the central silicon atom produced a series of new types of electron transporting materials. <img src='http://pubs.rsc.org/ej/JM/2009/b915214h/b915214h-ga.gif'> </P>
Son, Ho-Jin,Han, Won-Sik,Wee, Kyung-Ryang,Chun, Ji-Yun,Choi, Kyu-Bum,Han, Su Jung,Kwon, Soon-Nam,Ko, Jaejung,Lee, Chongmok,Kang, Sang Ook WILEY-VCH Verlag 2009 European journal of inorganic chemistry Vol.2009 No.11
<P>A series of four-coordinate boron compounds of the type N,O-(OPh<SUP>OxZ</SUP>ArX)BPh<SUB>2</SUB> or N,O-(OPh<SUP>OxZ</SUP>NPh<SUB>2</SUB>)BPh<SUB>2</SUB> (5a–g) has been prepared by treating triphenylboron (TPB) with2-(4,4-dimethyl-4,5-dihydrooxazol-2-yl)-4-X-arylphenols(HOPh<SUP>OxZ</SUP>ArX; 4a–f) or 2-(4,4-dimethyl-4,5-dihydrooxazol-2-yl)-4-(4-diphenylamino)phenol (HOPh<SUP>OxZ</SUP>NPh<SUB>2</SUB>; 4g). A systematic change in the electronic structures is achieved in these compounds by incorporating electron-withdrawing (EW) and -donating (ED) groups [ArX (X = 4-cyano-, 2,4-difluoro-, 4-chloro-, phenyl, 4-methoxy-, and 4-dimethylaminophenyl) or NPh<SUB>2</SUB>] at the 4-position of the phenoxide. The absorption and emission maxima of the ED groups show a significant red-shift compared to those observed in the EW groups. This red-shift suggests that π-conjugation is effectively extended over the arylphenoxides and oxazoline moiety once the boron center has been plugged into the corresponding ligands. The gradual decrease observed in the bandgaps on going from EW to ED groups is found to be in agreement with the increase in oxidation potentials determined by the cyclic voltammetry (CV) experiments. In particular, a Hammet plot between the EW and ED substituents and oxidation potentials confirms the ground state electronic perturbation. Such alterations are attributed mainly to an elevation of the energy levels of the HOMOs), as further confirmed by a series of theoretical calculations on the frontier orbitals of each system. The ED group (-NPh<SUB>2</SUB>) substituted compound 5g shows a bipolar character due to intramolecular charge transfer in the complex, with the highest photoluminescence quantum yield being obtained in toluene. This new boron complex was found to function as an emitter in electroluminescence (EL) devices, with a maximum brightness of 2905 cd/m<SUP>2</SUP> at 13 V and a current efficiency of 1.63 cd/A at 6 mA/cm<SUP>2</SUP>, with a turn-on voltage of 4.3 V.(© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)</P> <B>Graphic Abstract</B> <P>A series of electron-push and -pull aryl-substituted oxazolylphenolate ligands is synthesized and used to prepare boron compounds. The photophysical properties of these boron compounds are evaluated,and the corresponding EL properties studied through device fabrication by using them as emitting materials in a multilayer device. <img src='wiley_img/14341948-2009-2009-11-EJIC200900017-fig000.gif' alt='wiley_img/14341948-2009-2009-11-EJIC200900017-fig000'> </P>
Monte Carlo 시뮬레이션을 이용한 이온 주입시의 점결함 분포의 계산
손명식,이준하,변기량,황호정 중앙대학교 기술과학연구소 1995 기술과학연구소 논문집 Vol.25 No.-
이온 주입시의 점결함 분포를 간접적으로 계산하기 위해 단결정 실리콘에서의 3차원 이온 주입 시뮬레이터인 TRICSI (TRansport Ions in Crystal Slilicon) Monte Carlo 코드를 확장하여 Boron 이온 주입시의 에너지와 dose에 따른 불순물(particle) 및 점결함 분포(point defect)를 계산하였다. 결함 분포는 Modified Kinchin-Pease equation을 단결정 실리콘에 적용하여 displacement damage에 의해 발생한 Frenkel Pair(vacancy-interstitial)분포를 계산하였으며 이온 주입시의 웨이퍼 온도에 의한 Frenkel Pair 소멸 효과는 고려하지 않았다. 계산 결과는 3차원 각면으로의 2차원 투영 불순물 농도로 표현하고 주입된 dose와 에너지에 다른 마스크 주입시의 에너지 및 dose 의존성 도펀트 분포와 이에 따른 damage 분포를 이해하는 데 중요한 정보가 될 것으로 기대된다. We extended our ion implantation simulator, TRICSI (TRansport lons in Crystal Slilicon) Monte Carlo(MC) code, and indirectly calculated particle and its generating point defect distributions depending on energy and dose during boron implantation into <100> single0crystal silicon. The point defect distribution of Frenkel Pair(vacancy-interstitial) was abtained by applying the modified Kinchin-Pease equation, which usually uses in MC simulation in amorphous target, to MC simulation in crystalline silicon. We did not considered the annihilation of Frenkel Pairs due to wafer temperature. The calculated results were projected onto each free-dimensional plane, presented as two-dimensional concentration profile on it. The particle concentration profile was presented with typical open mask structure. We expect that these results help understand the dopant and its generating damage distributions depending on energy and dose during boron implantation.
Kang, Ju Sik,Hong, Tae Ryang,Kim, Hyung Jong,Son, Young Hoon,Bin, Jong-Kwan,Lee, Bang Sook,Yang, Joong Hwan,Kim, JinWuk,Cho, Min Ju,Kwon, Jang Hyuk,Choi, Dong Hoon Elsevier 2015 ORGANIC ELECTRONICS Vol.26 No.-
<P><B>Abstract</B></P> <P>New large-bandgap host materials with carbazole and carboline moieties were designed and synthesized for high-performance blue phosphorescent organic light-emitting diodes (PhOLEDs). The two kinds of host materials, 9-(4-(9<I>H</I>-carbazol-9-yl)phenyl)-6-(9<I>H</I>-carbazol-9-yl)-9<I>H</I>-pyrido[2,3-<I>b</I>]indole (<B>pP2CZCB</B>) and 9-(3-(9<I>H</I>-carbazol-9-yl)phenyl)-6-(9<I>H</I>-carbazol-9-yl)-9<I>H</I>-pyrido[2,3-<I>b</I>]indole (<B>mP2CZCB</B>), displayed promisingly high triplet energies of ∼2.92–2.93eV for enhancing the exothermic energy transfer to bis[2-(4,6-difluorophenyl)pyridinato-C<SUP>2</SUP>,<I>N</I>](picolinato)iridium(III) (FIrpic) in PhOLED devices. It was found that the blue PhOLEDs bearing the new host materials and the FIrpic dopant exhibited markedly higher external quantum efficiencies (EQEs) than a device made with 1,3-bis(<I>N</I>-carbazolyl)benzene (mCP) as the host. In particular, the PhOLED device made with 3wt% FIrpic as the dopant and <B>mP2CZCB</B> as the host material displayed a low driving voltage of 4.13V and the high EQE of 25.3% at 1000cdm<SUP>−2</SUP>.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Two new host materials showed high triplet energies over 2.92eV for blue PhOLED. </LI> <LI> Both host materials exhibited bipolar property. </LI> <LI> EQE of mP2CZCB-based PhOLED is measured to be 25.3% at 1000cd/m<SUP>2</SUP>. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>