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Influence of Hydrogen on Ternary MgZrNx Thin Films Deposited by Combinatorial Sputtering
김제경,( Sage R. Bauers ),( Imran S. Khan ),박보인,( Kevin R. Talley ),( John Perkins ),김대한,( Andriy Zakutayev ),신병하 한국공업화학회 2019 한국공업화학회 연구논문 초록집 Vol.2019 No.1
Nitride materials have been widely used in optoelectronic applications such as light emitting diodes (LED) or as coatings and diffusion barriers in semiconducting industries; however, there is almost no study of photovoltaic devices based on nitride regarldess of their remarkable properties. Espcially, ternary nitrides with transition metals have been reported to posses a high dieletric constant which is favorable for photovoltaic applications. In this study, MgZrNx thin films were deposited by a high-throughput combinatorial sputtering technique. Only a few studies on the material properties of these ternary nitrides have been reported. Using a high-throughput analysis, we studied their optoelectronic, electrical, and optical properties as a function of the compositional (or cationic/anionic) ratio. Furthermore, we incorporated hydrogen to MgZrNx thin films as a passivation means.