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Bond strength of individual carbon nanotubes grown directly on carbon fibers
Kim, Kyoung Ju,Lee, Geunsung,Kim, Sung-Dae,Kim, Seong-Il,Youk, Ji Ho,Lee, Jinyong,Kim, Young-Woon,Yu, Woong-Ryeol IOP 2016 Nanotechnology Vol.27 No.40
<P>The performance of carbon nanotube (CNT)-based devices strongly depends on the adhesion of CNTs to the substrate on which they were directly grown. We report on the bond strength of CNTs grown on a carbon fiber (T700SC Toray), measured via <I>in situ</I> pulling of individual CNTs inside a transmission electron microscope. The bond strength of an individual CNT, obtained from the measured pulling force and CNT cross-section, was very high (∼200 MPa), 8–10 times higher than that of an adhesion model assuming only van der Waals interactions (25 MPa), presumably due to carbon–carbon interactions between the CNT (its bottom atoms) and the carbon substrate.</P>
Kim, Jinbum,Choi, Seongheum,Park, Taejin,Kim, Jinyong,Kim, Chulsung,Cha, Taeho,Lee, Hyangsook,Lee, Eunha,Won, Jung Yeon,Lee, Hyung-Ik,Hyun, Sangjin,Kim, Sunjung,Shin, Dongsuk,Kim, Yihwan,Kwon, Keewon American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.1
<P>To synthesize a thermally robust Ni1-xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a-local surface temperature above 1000 degrees C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni1-xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 degrees C, the noble Ni1-xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.</P>
Doping and strain effects on the microstructure of erbium silicide on Si:P
Kim, Jinyong,Choi, Seongheum,Kim, Jinbum,Lee, Hyangsook,An, Byeongseon,Lee, Hyunjung,Lee, Choeun,Yang, Cheol-Woong,Kim, Hyoungsub Elsevier 2017 Journal of alloys and compounds Vol.727 No.-
<P><B>Abstract</B></P> <P>In pursuit of a potential low-resistive contact structure, ErSi<SUB>2-x</SUB> was grown on an excessively P-doped and highly strained epitaxial Si layer (Si:P with a P concentration of ∼2.8 at%), and its microstructure was investigated in comparison to that grown on a conventional Si(001) substrate. On the Si substrate, ErSi<SUB>2-x</SUB> grains nucleated with a local epitaxial relationship and grew to form a polycrystalline film with a preferred alignment of ErSi<SUB>2-x</SUB>(10 1 ¯ 0)//Si(001) in a largely strained state. However, the epitaxial relationship at the interface during the ErSi<SUB>2-x</SUB> nucleation stage was disrupted, and randomly oriented columnar ErSi<SUB>2-x</SUB> grains grew on the Si:P(001) layer. Several experiments to separate the possible strain and doping effects showed that inhibition of the epitaxial nucleation of ErSi<SUB>2-x</SUB> grains was induced by excessive P accumulation at the interface region rather than by the strain effect. P enrichment at the interface encouraged ErSi<SUB>2-x</SUB> film growth without a preferred orientation, and the intermittent P-deficient areas worsened the interface roughness by provoking the local intrusion of ErSi<SUB>2-x</SUB> grains toward the Si:P layer.</P> <P><B>Highlights</B></P> <P> <UL> <LI> ErSi<SUB>2-x</SUB> grows with a randomly oriented columnar structure on the Si:P(001) layer. </LI> <LI> The dominant factor affecting the microstructural change is the doping effect. </LI> <LI> A critical P concentration is needed to completely alter its microstructure. </LI> <LI> Inhomogeneous P accumulation induces encroachment of ErSi<SUB>2-x</SUB> grains at the interface. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Kim, Jinbum,Shin, Ilgyou,Park, Taejin,Kim, Jinyong,Choi, Seongheum,Lee, Sungho,Hong, Seongpyo,Lee, Hyung-Ik,Won, Jung Yeon,Kim, Taegon,Kim, Yihwan,Hwang, Kihyun,Lee, Hoo-Jeong,Kim, Hyoungsub Elsevier 2019 JOURNAL OF ALLOYS AND COMPOUNDS Vol.788 No.-
<P><B>Abstract</B></P> <P>Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni<SUB>2</SUB>Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (<I>P</I>). Vertically nonuniform compositional profile with an interfacial intermixing was observed under a solid state reaction regime (<I>P</I> < 400 mJ/cm<SUP>2</SUP>) due to a limited atomic diffusion. At higher <I>P</I> condition, melting/resolidification occurred with a continuous increase in the Si concentration, and various microstructures of the film evolved with increasing <I>P</I>: amorphous structure and nucleation/growth of NiSi and NiSi<SUB>2</SUB> phases form in that order on the Si interface. Lastly, by applying additional rapid thermal annealing on the polycrystalline mixture of NiSi and NiSi<SUB>2</SUB> phases formed by PLA, a uniform Pt-doped NiSi<SUB>2</SUB> film with strong epitaxial growth tendency on the Si(001) substrate and high thermal stability (up to 900 °C) was synthesized.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Pt-doped Ni-silicides are formed using pulsed-laser annealing at various powers. </LI> <LI> Power-dependent solid- and liquid-state reactions yield various microstructures. </LI> <LI> Power-dependent microstructural and phase evolution paths are suggested. </LI> <LI> Additional rapid thermal annealing forms a thermally stable NiSi<SUB>2</SUB> film. </LI> </UL> </P>
김진용(Jinyong Kim),김재희(Jaehee Kim),김승권(Sheung-Kown Kim) 한국경영과학회 2015 한국경영과학회지 Vol.40 No.2
The valuation of patents is very important, since technology competitiveness is crucial for firms to maintain global competitiveness. But, the patent valuation is difficult and challenging because of the uncertainty affecting their returns. Hence, we propose a patent valuation method by incorporating game theory into the real option model, which can not only potentially recognizes the effect of uncertainty on patent value, but also consider investment decision in a competitive market, as a game between firms. With the model, we can consider dynamic strategy involving an option of patent leveraging strategies enabling the firm to switch among compete, cooperate, or wait modes under different demand or competitive advantage condition.