http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Anticancer effects of D-pinitol in human oral squamous carcinoma cells
Shin, Hyun-Chul,Bang, Tea-Hyun,Kang, Hae-Mi,Park, Bong-Soo,Kim, In-Ryoung The Korean Academy of Oral Biology 2020 International Journal of Oral Biology Vol.45 No.4
D-pinitol is an analog of 3-methoxy-D-chiro-inositol found in beans and plants. D-pinitol has anti-inflammatory, antidiabetic, and anticancer effects. Additionally, D-pinitol induces apoptosis and inhibits metastasis in breast and prostate cancers. However, to date, no study has investigated the anticancer effects of D-pinitol in oral cancer. Therefore, in this study, whether the anticancer effects of D-pinitol induce apoptosis, inhibit the epithelial-to-mesenchymal transition (EMT), and arrest cell cycle was investigated in squamous epithelial cells. D-pinitol decreased the survival and cell proliferation rates of CAL-27 and Ca9-22 oral squamous carcinoma cells in a concentration- and time-dependent manner. Evidence of apoptosis, including nuclear condensation, poly (ADP-ribose) polymerase, and caspase-3 fragmentation, was also observed. D-pinitol inhibited the migration and invasion of both cell lines. In terms of EMT-related proteins, E-cadherin was increased, whereas N-cadherin, Snail, and Slug were decreased. D-pinitol also decreased the expression of cyclin D1, a protein involved in the cell cycle, but increased the expression of p21, a cyclin-dependent kinase inhibitor. Hence, D-pinitol induces apoptosis and cell cycle arrest in CAL-27 and Ca9-22 cells, demonstrating an anticancer effect by decreasing the EMT.
새로운 구조의 nMOS 삽입형 IGBT의 전기적 특성 분석
신사무엘(Shin, Samuell),손정만(Son, Jung-Man),박태룡(Park, Tea-Ryoung),구용서(Koo, Yong-Seo) 한국전기전자학회 2008 전기전자학회논문지 Vol.12 No.4
본 논문에서는 기존 IGBT의 구조적 한계로 인한 순방향 전압강하와 스위칭 손실간의 트레이드-오프 관계를 극복하고, 좀 더 우수한 전기적 특성을 갖는 새로운 구조의 nMOS 삽입형 IGBT를 제안하였다. 제안된 구조는 IGBT소자의 셀(Cell)과 셀 사이에 존재하는 폴리(poly) 게이트 영역에 nMOS를 형성시킨 구조로 N-드리프트 층으로의 전자, 정공의 주입효율을 증가시켜 기존 구조보다 더 낮은 온-저항과 빠른 스위칭 손실을 얻도록 설계된 구조이다. 시뮬레이션 결과 제안된 구조의 단일 소자인 경우 순방향 전압강하와 스위칭 특성은 각각 2.65V와 4.5us로, 기존 구조가 갖는 3.33V와 5us비해 약 26%의 감소된 순방향 전압강하와 10%의 낮은 스위칭 특성을 보였으며 래치-업 특성은 773A/로 기존 520A/보다 33%의 상승된 특성을 보였다. In this paper, we proposed the novel IGBT with an additional n-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed IGBT are caused by an enhanced electron current injection efficiency which is caused by additional n-type MOS structure. In the simulation result, the proposed IGBT has the lower on state voltage of 2.65V and the shorter turn-off time of 4.5us than those of the conventional IGBT(3.33V, 5us).