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스테레오비전과 레이저레이더의 융합을 통한 도로상의 장애물 검출
송명재(Myeongjae Song),이기용(Kiyong Lee),이준웅(Joonwoong Lee) 한국자동차공학회 2005 한국자동차공학회 Symposium Vol.- No.-
This paper proposes obstacle detection algorithm in front of ego vehicle using stereo vision and laser radar. Obstacle detection algorithm, using Stereo vision, exploits a distortion phenomenon taken place in remapping process of original stereo images to a virtual top-view. Laser radar used obstacle detection, a type of ONIRON's scanning, outputs information on one obstacle through inner processing. In this paper, proposed algorithm using stereo vision proves the reasonability by expressing the result of each stereo vision and laser radar in one and the same domain, and presents the possibility that can build more reliable obstacle detection system by making up for the weak points of stereo vision and laser radar.
Lee, Myeongjae,Kim, Min Je,Ro, Suhee,Choi, Shinyoung,Jin, Seon-Mi,Nguyen, Hieu Dinh,Yang, Jeehye,Lee, Kyung-Koo,Lim, Dong Un,Lee, Eunji,Kang, Moon Sung,Choi, Jong-Ho,Cho, Jeong Ho,Kim, BongSoo American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.34
<P>High carrier mobilities have recently been achieved in polymer field effect transistors (FETs). However, many of these polymer FET devices require the use of chlorinated solvents such as chloroform (CF), chlorobenzene (CB), and odichlorobenzene (DCB) during fabrication. The use of these solvents is highly restricted in industry because of health and environmental issues. Here, we report the synthesis of a low band gap (1.43 eV, 870 nm) semiconducting polymer (PDPP2DT-F2T2) having a planar geometry, which can be readily processable with nonchlorinated solvents such as toluene (TOL), o-xylene (XY), and 1,2,4-trimethylbenzene (TMB). We performed structural characterization of PDPP2DT-F2T2 films prepared from different solvents, and the electrical properties of the films were measured in the context of FETs. The devices exhibited an ambipolar behavior with hole dominant transport. Hole mobilities increased with increasing boiling point (bp) of the nonchloririated solvents: 0.03, 0.05, and 0.10 cm(2) V-1 s' for devices processed using TOL, XY, and TMB, respectively. Thermal annealing further improved the FET performance. TMB-based polymer FETs annealed at 200 degrees C yielded a maximum hole mobility of 1.28 cm(2) s(-1), which is far higher than the 0.43 cm(2) V-1 s(-1) obtained from the CF-based device. This enhancement was attributed to increased interchain interactions as well as improved long-range interconnection between fibrous domains. Moreover, all of the nonchlorinated solutions generated purely edge-on orientations of the polymer chains, which is highly beneficial for carrier transport in FET devices. Furthermore, we fabricated an array of flexible TMBprocessed PDPP2DT-F2T2 FETs on the plastic PEN substrates. These devices demonstrated excellent carrier mobilities and negligible degradation after 300 bending cycles. Overall, we demonstrated that the organized assembly of polymer chains can be achieved by slow drying using high bp nonchlorinated solvents and a post thermal treatment. Furthermore, we showed that polymer FETs processed using high bp nonhalogenated solvents may outperform those processed using halogenated solvents.</P>
Jang Myeongjae,Jang Jeonghyun,Moon Sumin,Kim Hyun Su 한국물리학회 2022 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.81 No.9
We propose a method to fnd the mode-locking region of the all normal dispersion (ANDi) optical fber laser using the transmittance map of the output coupler obtained by measuring the polarization of the beam inside the resonator. The transmittance map is a function of the rotation angles of the waveplates installed inside the ANDi fber laser. From the correlation analysis of the measured mode-locking region and the obtained transmittance map, we found that the transmittance map can be used to the rotation angle region of the wave plates satisfying the mode-locking conditions of the ANDi fber laser. This study is the frst demonstration, to the best of our knowledge, that the mode-locking pulse occurs only under positivefeedback conditions by analyzing the relative diferences in the two transmittances of the output coupler obtained using the polarization state measured in continuous wave and mode-locking modes.