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Generating Energy-Dependent Potentials
U. Laha 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.12
Energy-momentum-dependent potentials corresponding to a separable nonlocal potential and a separable nonlocal potential plus a local potential are constructed to study nucleon-nucleon and nucleus-nucleus systems. The constructed local potentials developed via two different approaches either have no hard core or a quasi-hard core. Elastic scattering phase shifts are computed for the proton-proton and the alpha-alpha systems by using the phase function method and are found to be in good agreement with experimental data.
On the Alpha-Carbon-12 Elastic Scattering
Ashwini Kumar Behera,Ujjwal Laha,Madhura Majumder,Jhasaketan Bhoi 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.74 No.5
A closed form expression for the Fredholm determinant is constructed for motion in Coulomb-distorted nonlocal separable potential and expressed it in its maximal reduced form. We demonstrate the usefulness of our constructed expression by means of a model calculation.
Hulthén Half-off-Shell T Matrix-Application to n-p and n-d Systems
A. K. Behera,U. Laha,P. Sahoo,J. Bhoi 한국물리학회 2020 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.76 No.9
In a previous paper, one of us (UL) constructed an exact analytical expression for the irregular (Jost) solution, off the energy shell, for the Hulthén potential by using the method of ordinary differential equation along with the properties of certain special functions of mathematical physics. In the present text, closed form expressions for the off-shell irregular solution and half-off-shell T-matrix for motion in the Hulthén potential are re-derived by using the direct integration approach to the problem under consideration. We demonstrate the usefulness of our expressions through some model calculations and achieve excellent agreement between bound-and scattering-state observables and standard results.
Sanchi Arora,Animesh Laha,Abhijit Majumdar,Bhupendra Singh Butola 한국유변학회 2017 Korea-Australia rheology journal Vol.29 No.3
Prediction models for the viscosity curve of a shear thickening fluid (STF) over a wide range of shear rate at different temperatures were developed using phenomenological and artificial neural network (ANN) models. STF containing 65% (w/w) silica nanoparticles was prepared using polyethylene glycol (PEG) as dispersion medium, and tested for rheological behavior at different temperatures. The experimental data set was divided into training data and testing data for the model development and validation, respectively. For both the models, the viscosity of STF was estimated for all the zones with good fit between experimental and predicted viscosity, for both training and testing data sets.
Creep Properties of Intercritical Heat Treated Boron Added Modified 9Cr–1Mo Steel
T. Sakthivel,C. R. Das,K. Laha,G. Sasikala 대한금속·재료학회 2021 METALS AND MATERIALS International Vol.27 No.2
Creep properties of intercritically heat-treated (ICHT) boron free modified 9Cr–1Mo steel (P91-IC) and boron containingmodified 9Cr–1Mo (P91B-IC) steel have been studied at 923 K over a stress range of 50–120 MPa. Minimum creep rate ofthe P91B-IC steel was significantly lower than the P91-IC steel. Stress exponent and threshold stress values in P91-IC andP91B-IC steels were found to be 6.5 and 28 MPa, and 8.7 and 38 MPa respectively. P91B-IC steel has exhibited higher creeprupture life than the P91-IC steel. Higher creep rupture strength in the P91B-IC steel as compared to P91-IC steel has beenattributed to the presence of stable M23C6precipitates at the lath boundaries and other high angle boundaries. The creeprupture strengths of both the ICHT steels were lower than the respective base metal.
Tripathy, Suman Kumar,De, Umasankar,Dehury, Niranjan,Laha, Paltan,Panda, Manas Kumar,Kim, Hyung Sik,Patra, Srikanta The Royal Society of Chemistry 2016 Dalton Transactions Vol.45 No.38
<P>Six mononuclear Ir complexes (1-6) using polypyridyl-pyrazine based ligands (L-1 and L-2) and {[cp*IrCl-(mu-Cl)](2) and [(ppy)(2)Ir(mu-Cl)](2)} precursors have been synthesised and characterised. Complexes 1-5 have shown potent anticancer activity against various human cancer cell lines (MCF-7, LNCap, Ishikawa, DU145, PC3 and SKOV3) while complex 6 is found to be inactive. Flow cytometry studies have established that cellular accumulation of the complexes lies in the order 2 > 1 > 5 > 4 > 3 > 6 which is in accordance with their observed cytotoxicity. No changes in the expression of the proteins like PARP, caspase 9 and beclin-1, Atg12 discard apoptosis and autophagy, respectively. Overexpression of CHOP, activation of MAPKs (P38, JNK, and ERK) and massive cytoplasmic vacuolisation collectively suggest a paraptotic mode of cell death induced by proteasomal dysfunction as well as endoplasmic reticulum and mitochondrial stress. An intimate relationship between p53, ROS production and extent of cell death has also been established using p53 wild, null and mutant type cancer cells.</P>
Sudipta Das,Krista R. Khiangte,Rajveer S. Fandan,Jaswant S. Rathore,Ravindra S. Pokharia,Suddhasatta Mahapatra,Apurba Laha 한국물리학회 2017 Current Applied Physics Vol.17 No.3
We report growth, structural, and electrical properties of epitaxial Ge layers on Si (001) wafers for next generation complementary metal oxide semiconductor devices. The epi-Ge layers were grown by solid source molecular beam epitaxy (MBE) at substrate temperatures (TG) varying from 200 C to 500 C. A two-step growth process, where an initial layer of thickness ~30 nm is grown at a substrate temperature of 250 C (except those grown below/at 250 C), and the remaining layer is grown at a higher temperature, was found to be an efficient approach to improve the crystal quality of the Ge layers. The epi-Ge on Si exhibits bulk hole-mobility as high as 736 cm2/V-s at room temperature. Ti/Ge/Ti metalsemiconductor-metal (MSM) back-to-back Schottky diodes, fabricated on these epitaxial Ge layers, show excellent electrical properties. Further, metal oxide semiconductor (MOS) capacitors fabricated with HfO2 as the gate oxide exhibit low leakage current density of 4.7 102 A/cm2 (at VgVFB ¼ 1 V) and mid-gap interface trap density of 5.0 1012cm2eV1.