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국내 공동주택의 품질향상을 위한 BIM기반 면적산정 방법의 실효성 연구
김준규,류정림,추승연,Kim, Jun-Gyu,Ryu, Jung-Rim,Choo, Seung-Yeon 한국주거학회 2013 한국주거학회 논문집 Vol.24 No.2
The Purpose of this study is to improve construction quality with area calculation methods from BIM design technology. BIM has been supporting public-private-organizations and academic circles as a solution technology to manage and produce informations effectively from construction field including facility manage one. BIM standards are necessary but not sufficient for achieving perfect practical application in South Korea. In particular, development of architectural rule based area calculation methods is very urgent and important to improve construction quality. To solve those problems, methods and standards on area calculation are developed and its effectiveness of the proposed BIM-based methods is defined through the analysis between the existed area calculation method and process which are 2D based. This study will not only improve economic efficiency and accuracy of the construction quality but also settle the BIM environment in the domestic architecture.
지르코늄 스폰지를 원료로 사용하여 화학증착법으로 제조된 탄화지르코늄 코팅층의 물성
김준규,최유열,이영우,박지연,최두진,Kim, Jun-Gyu,Choi, Yoo-Youl,Lee, Young-Woo,Park, Ji-Yeon,Choi, Doo-Jin 한국세라믹학회 2008 한국세라믹학회지 Vol.45 No.4
The SiC and ZrC are critical and essential materials in TRISO coated fuel particles since they act as protective layers against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. However, SiC and ZrC have critical disadvantage that SiC loses chemical integrity by thermal dissociation at high temperature and mechanical properties of ZrC are weaker than SiC. In order to complement these problems, we made new combinations of the coating layers that the ZrC layers composed of SiC. In this study, after Silicon carbide(SiC) were chemically vapor deposited on graphite substrate, Zirconium carbide(ZrC) were deposited on SiC/graphite substrate by using Zr reaction technology with Zr sponge materials. The different morphologies of sub-deposited SiC layers were correlated with microstructure, chemical composition and mechanical properties of deposited ZrC films. Relationships between deposition pressure and microstructure of deposited ZrC films were discussed. The deposited ZrC films on SiC of faceted structure with smaller grain size has better mechanical properties than deposited ZrC on another structure due to surface growth trend and microstructure of sub-deposited layer.
다공성 $BaTiO_3$계 세라믹스의 흡착산소와 전기적 성질
김준규,조원승,유연철,박경순,Kim, Jun-Gyu,Jo, Won-Seung,Yu, Yeon-Cheol,Park, Gyeong-Sun 한국재료학회 2001 한국재료학회지 Vol.11 No.10
Electrical properties of porous $BaTiO_3-based$ ceramics were investigated from the viewpoint of adsorbed oxygen. Namely, the effects of heat-treatment temperature ($450-600^{\circ}C$) and measuring atmosphere (oxygen and nitrogen) on the PTCR characteristics of the porous $BaTiO_3-based$ ceramics were investigated. It was found that the PTCR characteristics of the porous $BaTiO_3-based$ ceramics was developed at $\geq$55$0^{\circ}C$, and the magnitude of the PTCR characteristics increased with increasing heat-treatment temperature. It was also found that the magnitude of the PTCR characteristics in the porous $BaTiO_3-based$ ceramics increased in oxygen atmosphere, whereas decreased in nitrogen atmosphere during heating and cooling.
김준규,금이슬,최두진,이영우,박지연,Kim, Jun-Gyu,Kum, E-Sul,Choi, Doo-Jin,Lee, Young-Woo,Park, Ji-Yeon 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.10
The ZrC layer instead of SiC layer is a critical and essential layer in TRISO coated fuel particles since it is a protective layer against diffusion of fission products and provides mechanical strength for the fuel particle. In this study, we carried out computational simulation before actual experiment. With these simulation results, Zirconium carbide (ZrC) films were chemically vapor deposited on $ZrO_2$ substrate using zirconium tetrachloride $(ZrCl_4),\;CH_4$ as a source and $H_2$ dilution gas, respectively. The change of input gas ratio was correlated with growth rate and morphology of deposited ZrC films. The growth rate of ZrC films increased as the input gas ratio decreased. The microstructure of ZrC films was changed with input gas ratio; small granular type grain structure was exhibited at the low input gas ratio. Angular type structure of increased grain size was observed at the high input gas ratio.
$BaTiO_3$계 세라믹스의 전기적 성질과 미세조직에 미치는 부분산화 Ti 분말 첨가의 영향
김준규,조원승,박경순,Kim, Jun-Gyu,Jo, Won-Seung,Park, Gyeong-Sun 한국재료학회 2000 한국재료학회지 Vol.10 No.10
본 연구에서는 부분산화한 Ti 분말을 첨가한 $BaTiO_3$계 세라믹스를 진공중 $1350^{\circ}C$에서 1 h 소결하여 제조하였다. 공기중 가열후 전기적 성질과 미세조직에 미치는 부분산화한 Ti분말 첨가량의 효과를 조사하였다. 그 결과, 5~7vol%의 부분산화한 Ti분말을 첨가한 반도성 $BaTiO_3$계 세라믹스는 비정항의 변화크기가 $10^5$이상인 우수한 PTCR 특성을 나타내었고 또한, 고다공질과 미립화된 조직을 얻을 수 있었다. 5 vol%의 부분산화한 Ti 분말을 첨가한 $BaTiO_3$계 세라믹스의 상대밀도와 입도는 각각 54%, $1.3\;{\mu\textrm{m}}$였다. 부분산화한 Ti 분말의 첨가에 의한 $BaTiO_3$계 세라믹스의 PTCR 특성 발현은 입계에서의 산소 흡착에 기인하였는데, 이는 Heywang모델로써 설명할 수 있었다. $BaTiO_3$-based ceramics with partially oxidized Ti powders were prepared by sintering at $1350^{\circ}C$ for 1 h in v vacuum, and then heated in air. In this study, the effect of partially oxidized Ti powders on electrical properties and microstructures of $BaTiO_3$-based ceramics was investigated. It was found out that the semiconductive $BaTiO_3$-based ceramics beζame to show excellent PTCR (more than $10^5$) characteristic by adding 5~7 vol% of partially oxidized Ti powder. Also, it was found out that the sintered compact had extremely porous and fine-grained microstructure. The relative density and grain size of sintered compact with 5 vol% of partially oxidized Ti powders were 54% and $1.3\;{\mu\textrm{m}}$, respectively. The mechanism for the development of PTCR characteristic in $BaTiO_3$-based ceramics with partially oxidized Ti powders due to the adsorption of oxygen at grain boundaries, and could be explained, based on Heywang model.
황화 암모늄을 이용한 Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> 다층 게이트 절연막 트랜지스터 전기적 및 계면적 특성 향상 연구
김준규 ( Jun-gyu Kim ),김대현 ( Dae-hyun Kim ) 한국센서학회 2020 센서학회지 Vol.29 No.4
In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In<sub>0.7</sub>Ga<sub>0.3</sub>As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In<sub>0.7</sub>Ga<sub>0.3</sub>As QW MOSFETs with and without (NH4)2S treatment and then deposited 1/4 nm of Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density Dit (2.83×10<sup>12</sup> cm<sup>-2</sup>eV<sup>-1</sup>) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.