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LaNiO<sub>3</sub>의 (100)배향성이 Pb(Zr,Ti)O<sub>3</sub> 박막의 결정성장과 강유전성에 미치는 영향
박민석,서병준,유영배,문병기,손세모,정수태,Park, Min-Seok,Seo, Byung-Joon,Yoo, Young-Bae,Moon, Byung-Kee,Son, Se-Mo,Chung, Su-Tae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.4
Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 %), those on a randomly oriented LNO show a random crystal orientation (F=60 %). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.