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두께에 따른 BNT/BT 이종층 후막의 구조적, 유전적 특성
이동현(Dong-Hyun Lee),김민창(Min-Chang Kim),김재식(Jae-Sik Kim),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.11
The heterolayered (Bi<SUB>0.5</SUB>Na<SUB>0.5</SUB>)TiO₃/BaTiO₃ thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric properties in the heterolayered teteragonal/rhombohedral structure composed of the BaTiO₃ and the (Bi<SUB>0.5</SUB>Na<SUB>0.5</SUB>)TiO₃ thick films. We investigated the effects of thickness on the structural and electrical properties of the heterolayered BNT/BT thick films. The structural and electrical properties of the heterolayered BNT/BT thick films were studied. The dielectric constant, loss and remanent polarization of the heheterolayered BNT/BT thick films were superior to those of single composition BaTiO₃ and (Bi<SUB>1/2</SUB>Na<SUB>1/2</SUB>)TiO₃, and those values for the heterolayered BNT/BT thick films sintered at 100Å were 916. 0.79 and 29.88 μC/㎠.
이동현(Dong-Hyun Lee),최의선(Eui-Sun Choi),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7
Electrical properties and microstructure were investigated on the effects of ZnO and The lead-free NKN-LST with the addition of ZnO were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of ZnO addition. For the NKN-LST-ZnO sintered at 1050℃, bulk density increased with the addition of ZnO and showed maximum value at addition 2.0mol% of ZnO. Curie temperature of the NKN-LST-ZnO ceramics slightly decreased with adding ZnO. The dielectric constant, piezoelectric constant (d₃₃) and electromechanical coupling factor (k<SUB>p</SUB>) increased at the small amount of ZnO addition, which might be due to the increase in density. The high piezoelectric properties = 153 pC/N, electromechanical coupling factor = 0.484 and dielectric constant = 2883 were obtained for the NKN-LST+0.5ZnO sintered at 1050℃ for 2h.
남성필(Sung-Pill Nam),노현지(Hyun-Ji Noh),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
The heterolayered BaTiO₃/(Bi<SUB>0.5</SUB>Na<SUB>0.5</SUB>)TiO₃ thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric properties in the heterolayered teteragonal/ rhombohedral structure composed of the BaTiO₃ and the (Bi<SUB>0.5</SUB>Na<SUB>0.5</SUB>)TiO₃ thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BNT/BT thick films. The structural and electrical properties of the heterolayered BNT/BT thick films were studied. All PZT heterolayered thin films show dense and homogeneous structure without the presence of the rosette structure. The dielectric constant, loss and remanent polarization oft heheterolayered BNT/BT thick films were superior to those of single composition BaTiO3 and (Bi<SUB>1/2</SUB>Na<SUB>1/2</SUB>)TiO₃, and those values for the heterolayered BNT/BT thick films sintered at 1100℃ were 916, 0.79 and 12.63 μC/㎠.
텅스텐을 첨가한 V<SUB>2-x</SUB>W<SUB>x</SUB>O? 박막의 전기적 특성
남성필(Sung-Pill Nam),노현지(Hyun-Ji Noh),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were about -3.45%/K.
비냉각 적외선 감지소자 응용을 위한 V₂O? 박막의 전기적 특성
남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
The V₂O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V₂O? thin films annealed at 300t were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V₂O? thin films annealed at 300t were about -2.65%/K.
텅스텐 첨가에 따른 V<SUB>2-n</SUB>W<SUB>n</SUB>O? 박막의 구조적, 전기적 특성
남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2008 대한전기학회 학술대회 논문집 Vol.2008 No.10
The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were about -3.45%/K.