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서창준,김병국,Seo, Chang-Jun,Kim, Byung-Kook 대한전자공학회 1994 전자공학회논문지-B Vol.b31 No.11
본 논문에서는 대규모 공정 제어 시스템에 대한 다중루프 제어기를 구성하기 위해 고급 공정 제어 언어를 개발하였다. 다중루프 제어기를 구성하기 위해 필요한 기본 기능들을 기능블럭으로 정의하고, 이를 간단하고 이해하기 쉬운 아스키 코드들의 열인 기능코드로 표현하였다. 공정에 대한 제어 알고리듬은 기능 코드들의 순서적 나열에 의해 구성된다. 다양한 적용 대상 하드웨어 환경에서 사용하기 위해 기능코드로 구성한 제어 프로그램을 C-언어 프로그램으로 변환하는 변환 프로그램을 구현하였다. 제안된 제어언어는 사용하기 간편하고 쉬우며 확장이 가능하고 다양한 제어시스템들에 적용될 수 있다. 시뮬레이션 결과는 제안된 제어언어가 실제 환경에서 사용이 유효함을 보여준다. In this paper, a high-level process control language is developed to construct multi-loop controllers for large scale process control systems. Function locks are defined which are basic functions necessary to configure a multi-loop controller. Each block is presented to the function code which is a line of ASCII codes and has the characteristics to be simple and to be easily understood. A control algorithm for a process is attained by means of the arrangement of function codes with order. In order to be used to various environments of target hardwares, a transformation program is prepared that transfers a control program configured by function codes to a C-language program. The proposed control language is easy and simple to use, possible to expend, and able to apply to various control systems. Simulation results are included to show the availability for the usage of the proposed control language in real world.
서창준,Seo, Chang-Jun 대한임베디드공학회 2008 대한임베디드공학회논문지 Vol.3 No.2
In this paper, we introduce a biped walking robot which can do static walking with 22 degree-of-freedoms. The developed biped walking robot is 480mm tall and 2500g, and is constructed by 22 RC servo motors. Before making an active algorithm, we generate the motions of robot with a motion simulator developed using C language. The two dimensional simulator is based on the inverse kinematics and D-H transform. The simulator implements various motions as we input the ankle's trajectory. Also the simulator is developed by applying the principle of inverted pendulum to acquisite the center of gravity. As we use this simulator, we can get the best appropriate angle of ankle or pelvic when the robot lifts up its one side leg during the walking. We implement the walking motions which is based on the data(angle) getting from both of simulators. The robot can be controlled by text shaped command through RF signal of wireless modem which is connected with laptop computer by serial cable.
서창준 대한임베디드공학회 2007 대한임베디드공학회논문지 Vol.2 No.4
Recently, most embedded systems have the multi-functions mixed the hardware with the software. The existing sequence programming methods are not suitable to implement the embedded system with multi-functions. So, it can be overcome the limit of a facility implementation by introducing the operating system in system. Also, due to the requirement about the better convenient and comfortable meeting or lecture environment, the necessity of electronic white-board is getting higher. Specially, the education using multimedia information is much more desirable for various and improved lecture at the high school and the university. But the sequence program which have been managed in existing electronic white-board system has some difficulties to achieve the software-oriented systems which has to accomplish many functions. In this paper, we propose the method to implement a facility of electronic white-board through using the embedded linux with excellent performance. The embedded linux presents the powerful software environment for the implementation of an embedded system and makes the realization of many various functions easy because it follows kernel characteristics of linux. In this paper, we describe the details for the structure of hardware, kernel source and device driver of a developed electronic white-board.
CMP 공정의 재현성 확보를 위한 공정제어 범위의 결정
서용진,정소영,김철복,박성우,이경진,김기욱,박창준 대불대학교 2002 大佛大學校大學院 硏究論文集 Vol.- No.1
To achieve the ULSI goals of higher density and greater performance, STI(shallow trench isolation)-CMP(chemical mechanical polishing) process has been attracted. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between SiO2 and Si3N4 films for the purpose of process simplification and in-situ EPD(end point detection). However, STI-CMP process has various defects such as nitride residue, torn oxide and demage of silicon active region. Also, it was difficult to assure the suitable process margin in the STI-CMP process. To solve these problems, in this paper, we discussed to determine the control limit of process, which can entirely remove the oxide on nitride film from the most area of high density as reducing the damage of dense moat area and minimizing dishing effect in the large field area. We, also, evaluated the wafer-to-wafer thickness variation and the day-by-day reproducibility of STI-CMP process after repeatable tests.
서용진,박성우,김철복,정소용,이경진,김기욱,박창준 대불대학교 2002 大佛大學校大學院 硏究論文集 Vol.- No.1
As the device geometry shrinks to the deep submicron region, chemical mechanical polishing(CMP) planarization become a more essential technique of advanced ULSI process. Also, CMP process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric(ILD) layers and interconnections with free-defect. Especially, the complete global planarization of IMD, ILD and interconnections can be achieved only with the CMP process. However, as the IMD and ILD layer gets thinner, several problems were found in the CMP process. It does have various problems such as dishing effect, torn oxide defects and nitride residues in oxide. So, it leads to severe circuit failure, which affects yield. In this paper, we studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was defected less than 2 on JR111 pad. Through the above result, we can select optimum polishing pad, so we can expect the improvement of throughput and device yield.
박창준,서용진,김상용,이우선 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.12
Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.