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Al<sub>2</sub>O<sub>3</sub>를 첨가한 LaFeO<sub>3</sub> 후막의 암모니아 가스 감지특성
김준곤,안병렬,마대영,박기철,김정규,Kim, Jun-Gon,Ahn, Byeong-Yeol,Ma, Tae-Young,Park, Ki-Cheol,Kim, Jeong-Gyoo 한국센서학회 2002 센서학회지 Vol.11 No.1
스크린 프린팅법으로 $Al_2O_3$ 기판 위에 $LaFeO_3$를 기본물질로 하여 $Al_2O_3$를 각각 2Wt.%, 5wt.%, 10wt.%를 첨가한 후막을 제조하였다. 열처리 온도에 따른 후막의 구조적, 전기적 특성과 암모니아 가스에 대한 감지특성을 조사하였다. X선 회절에서, 첨가한 $Al_2O_3$는 $1200^{\circ}C$까지의 열처리에도 $LaFeO_3$와 반응하여 화합물을 형성하지 않음을 확인하였다. 전자현미경 사진에서 $Al_2O_3$의 첨가량에 따른 열처리에 대한 입자의 변화는 차이를 보이지 않았다. 후만의 전기적 특성에서 활성화 에너지가 높고 전기저항이 작은 시료에서 가스감도가 좋았다. $Al_2O_3$를 2wt.% 첨가하여 $1200^{\circ}C$에서 열처리한 후막은 100ppm $NH_3$ 가스에 대해 동작온도 $350^{\circ}C$에서 210%의 감도를 보였다. 이 후막은 $NH_3$ 가스에 대해 우수한 선택성을 보였다. $LaFeO_3$-based thick films with 2wt.%, 5wt.% and 10wt.% $Al_2O_3$ additives were fabricated by screen printing method on $Al_2O_3$ substrates. Structural, electrical and ammonia gas sensing characteristics of the thick films with different heat treatment temperatures were examined. From XRD results, the compound of $LaFeO_3$ and $Al_2O_3$ was not found until the heat treatment at $1200^{\circ}C$. SEM microphotograph showed similar grain growth despite the amount of $Al_2O_3$ additives with the heat treatment. Thick films with high activation energy and low resistance in the electrical properties showed high sensitivity for gases. Thick films with 2wt % $Al_2O_3$ additives heat-treated at $1200^{\circ}C$ showed the sensitivities of 210% for 100 ppm $NH_3$ gas at the working temperature of $350^{\circ}C$. The thick films showed food selectivity to $NH_3$ gas.
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職務滿足의 理論構成을 위한 그 性格과 組織行動과의 관계에 대한 考察
金俊坤 대구효성가톨릭 대학교 1983 연구논문집 Vol.27 No.1
It has been conceived that the job satisfaction is one of the most important variables in work motivation and job performance. However, the current perspectives are changing from the above consideratiions to the significant variable itself in the research and practition of organizational administrations. To support this trends and promote the more systematic studies, the theoraetical construction for the job satisfaction itself is seemed the most important and precedent task. For the purpose of such needs in the organizational researches, the related empirical and theoretical researches were reviewed. The following conclusion, to meet such needs, could be obtained from the various reviews. The first, the concept of job satisfaction should be considered as one aspect of the emotional responses, and it be discriminated from those of motivation, morale and job involvment. In the measurement of job satisfaction, the method of facet or factor satisfaction is the more desirable than the method of overall satisfaction. However, the methods of weighting each factor and scale is to be developed in the factor satisfaction measurements. The second, in the theoretical construction for job satisfaction, it might be more desirable to focus on Two-factor theory of Herzberg et al, for explorations of the satisfying variables. And it should be emphasized to Equity theories for the satisfying process, and to Porter & Lawler's model for the relations of the other variables. The third, according to age, sex, intelligence, job experience, personality and so on, the job satisfaction represents the differences. Such variables should be recognized in the interpretation of job satisfaction and the implementation of the related management policies. The last, job satisfaction has significant positive correlations with the absenteesm and turn over, complaints, grievances, physical health, mental health, safety, alcoholism. However, the relation to the productivity is not generally accepted in present researches. These results are derived from the fact that the variables which affect to job performane are various in itself and complicated in their interaction. From the fact that job satisfaction influences the tenure, the reduction of absenteem, lateness, accidents and the improvement of loyalty and morale, it seems to be more desirable that job satisfaction contributes ultimately to productivity and organizational efficiency. Accordingly, job satisfaction is to be an important variable as ever in organizational researches and practices.
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金俊坤 대구효성가톨릭대학교 1987 연구논문집 Vol.35 No.1
For the purpose of the empirical study on the measurement and related variables of the job satisfaction, and it's demographic variables' effects, it was surveyed for the job satisfaction scales and value orientation scales. The subjects were 429 employeed in a large scale textile production company. The major findings are as follows. 1) Through the factor analysis, the dimensions of job satisfaction are leadership, company policies, salaries, promotion, working condition, benefits, and co-workers. These results are similiar with established researches. The consturct validity of the job satisfaction scale adopted in this study is considered as moderate. 2) The facet or factor satisfaction correlations with overall satisfaction are relevant coefficients(from r=.19 to r=.38). 3) The general value items have no significant effect on the job satisfaction. 4) The demographic variables' effects of the job satisfaction have similiar tendency wiht the established researches.
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김준곤,우형주,최한우,김기동,홍완,Kim Joonkon,Woo H. J.,Choi H. W.,Kim G. D.,Hong W. The Korean Vacuum Society 2005 Applied Science and Convergence Technology Vol.14 No.2
지난 10년 동안 유전체 내부에 형성된 나노미터 크기의 규소알갱이는 발광센터로서 주목 받아왔다 나노미터 크기인 결정질 규소의 엑시토닉 전자-홀의 쌍들이 발광결합에 기여한다고 여겨진다. 그러나 규소결정에 존재하는 여러가지 결함들은 비발광 천이의 경로가 되어 나노규소결접립의 발광천이와 경쟁하여 발광효율을 저하시키는 요인이 된다. 이러한 결정 결함들은 고온 열처리과정에서 대부분 소멸되나 $1000^{\circ}C$ 이상의 공정 에서도 나노규소와 유전체의 계면에 존재하는 결함들은 나노규소결정립의 발광을 억제하게 된다. 일반적으로 수소로서 규소결정립의 계면을 마감처리하게 되면 규소결정립의 발광효율이 획기적으로 향상되나 불행하게도 매질 내 수소의 높은 이동성으로 말미암아 후속 열처 리 과정에서 수소마감효과는 쉽게 손실된다. 따라서 본 연구에서는 온도가역적인 수소 대신 인을 이온주입 방법으로 첨가하여 수소와 같은 계면 마감효과를 얻으며 또한 후속 고온공정 에 대한 내구력을 증대시켰다. 모재인 산화규소 기판에 400keV, $1\times10^{17}\; Si/cm^2$와 그 주위에 균일한 함량을 도핑하기 위하여 다중에너지의 인을 주입하였다. 규소와 인을 이온주입 후 Ar 분위기에서 $1100^{\circ}C$ , 두 시간의 후열처리를 통하여 규소결정립을 형성하였으며 향상된 내열효과를 시험하기 위하여 Ar 분위기에서 $1000^{\circ}C$까지 열처리하였다. 인으로 마감된 나노미터 크기인 규소 결정립의 향상된 광-발광(PL)효과와 감쇄시간, 그리고 발광파장의 변화에 대하여 논의하였다. Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.
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