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Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors
Song, Yongjoo,Jeong, Yongsik,Yang, Kyounghoon The Institute of Electronics and Information Engin 2003 Journal of semiconductor technology and science Vol.3 No.1
In this work, process optimization techniques for high frequency performance of HBTs are presented. The techniques are focused on reducing parasitic base resistance and base-collector capacitance, which are key elements determining the high frequency characteristics of HBTs. Several fabrication techniques, which can significantly reduce the parasitic elements of the HBTs for improved high frequency performance, are proposed and verified by the measured data of the fabricated devices.
Systematic and Rigorous Extraction Procedure for InP HBT π-type Small-signal Model Parameters
Jincan Zhang,Leiming Zhang,Min Liu,Liwen Zhang 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.4
In this paper, a systematic and rigorous extraction procedure for InP heterojunction bipolar transistor (HBT) π-type small-signal model parameters is proposed. The AC current crowding effect modeled as a parallel RC circuit is included in the small-signal model of InP HBTs. All of the elements parameters are acquired by means of a systematic and rigorous extraction method based on peeling algorithm, and there is no any simplified approximation. The extraction equations are derived from S-parameters by peeling peripheral elements from small-signal models to get reduced ones, so the extraction technique is more easily understood and clearer. The complete π-type model for an emitter-up InP HBT with 1×15 µm2 emitter area is established and validated, which shows that the small-signal equivalent circuit and elements values extraction method have very high accuracy.