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Choi, Jin-Ha,Kim, Han,Choi, Jae-Hak,Choi, Jeong-Woo,Oh, Byung-Keun American Chemical Society 2013 ACS APPLIED MATERIALS & INTERFACES Vol.5 No.22
<P>Silicon nanowires have been used in the development of ultrasensitive biosensors or chemical sensors, which is originated in its high surface-to-volume ratio and function as field-effect transistor (FET). In this study, we developed an ultrasensitive DNA-gold (Au) nanoparticle complex-modified silicon nanowire field effect transistor (SiNW-FET) biosensor to detect matrix metalloproteinase-2 (MMP-2), which has been of particular interest as protein biomarker because of its relation to several important human diseases, through an enzymatic cleavage reaction of a specific peptide sequence (IPVSLRSG). SiNW patterns with a width of 100 nm and height of 100 nm were fabricated on a p-type silicon-on-insulator (SOI) wafer by electron-beam lithography. Next, negatively charged DNA-Au nanoparticle complexes coupled with the specific peptide (KKGGGGGG-IPVSLRSG-EEEEEE) were applied on the SiNWs to create a more sensitive system, which was then bound to aldehyde-functionalized SiNW. The enhanced negatively charged nanoparticle complexes by attached DNA were used to enhance the conductance change of the <I>p</I>-SiNW by MMP-2 cleavage reaction of the specific peptide. MMP-2 was successfully measured within a range of 100 fM to 10 nM, and the conductance signal of the p-type SiNW by the MMP-2 cleavage reaction was enhanced over 10-fold by using the DNA-Au nanoparticle complexes compared with using SiNW-attached negative single peptide sequences.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2013/aamick.2013.5.issue-22/am403816x/production/images/medium/am-2013-03816x_0007.gif'></P>
A Vertically Integrated Junctionless Nanowire Transistor
Lee, Byung-Hyun,Hur, Jae,Kang, Min-Ho,Bang, Tewook,Ahn, Dae-Chul,Lee, Dongil,Kim, Kwang-Hee,Choi, Yang-Kyu American Chemical Society 2016 NANO LETTERS Vol.16 No.3
<P>A vertically integrated junctionless field-effect transistor (VJ-FET), which is composed of vertically stacked multiple silicon nanowires (SiNWs) with a gate-all-around (GAA) structure, is demonstrated on a bulk silicon wafer for the first time. The proposed VJ-FET mitigates the issues of variability and fabrication complexity that are encountered in the vertically integrated multi-NW FET (VM-FET) based on an identical structure in which the VM-FET, as recently reported, harnesses a source and drain (S/D) junction for its operation and is thus based on the inversion mode. Variability is alleviated by bulk conduction in a junctionless FET (JL-FET), where current flows through the core of the SiNW, whereas it is not mitigated by surface conduction in an inversion mode FET (IM-FET), where current flows via the surface of the SiNW. The fabrication complexity is reduced by the inherent JL structure of the JL-FET because S/D formation is not required. In contrast, it is very difficult to dope the S/D when it is positioned at each floor of a tall SiNW with greater uniformity and with less damage to the crystalline structure of the SiNW in a VM-FET. Moreover, when the proposed VJ-FET is used as nonvolatile flash memory, the endurance and retention characteristics are improved due to the above-mentioned bulk conduction.</P>
Investigation of Sensor Performance in Accumulation- and Inversion-Mode Silicon Nanowire pH Sensors
Jieun Lee,Bongsik Choi,Seonwook Hwang,Jung Han Lee,Byung-Gook Park,Tae Jung Park,Dong Myong Kim,Dae Hwan Kim,Sung-Jin Choi Institute of Electrical and Electronics Engineers 2014 IEEE transactions on electron devices Vol. No.
<P>We investigate the performance of accumulation (ACC)-mode and inversion (INV)-mode silicon nanowire (SiNW) pH sensors that are electrically controlled by a liquid gate. The two sensing parameters of the changes of threshold voltage and current are explored in both types of SiNW pH sensors at different pH levels. As device dimensions and channel doping concentration increase, the performance of the ACC-mode biosensor degrades more rapidly than the performance of the INV-mode biosensor. Therefore, INV-mode SiNW pH sensors with a liquid gate could be robust to process variation and provide improved current sensitivity.</P>
RFCVD 장치를 이용하여 성장한 실리콘 나노와이어의 특성
김재훈,이형주,신석승,김기영,고춘수,김현숙,황용규,이충훈,Kim, Jae-Hoon,Lee, Hyung-Joo,Shin, Seok-Seung,Kim, Ki-Young,Go, Chun-Soo,Kim, Hyun-Suk,Hwang, Yong-Gyoo,Lee, Choong-Hun 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2
We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.
Vertically Integrated Multiple Nanowire Field Effect Transistor
Lee, Byung-Hyun,Kang, Min-Ho,Ahn, Dae-Chul,Park, Jun-Young,Bang, Tewook,Jeon, Seung-Bae,Hur, Jae,Lee, Dongil,Choi, Yang-Kyu American Chemical Society 2015 NANO LETTERS Vol.15 No.12
<P>A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2015/nalefd.2015.15.issue-12/acs.nanolett.5b03460/production/images/medium/nl-2015-034602_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl5b03460'>ACS Electronic Supporting Info</A></P>