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        Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

        Jeon, Dae-Young,Kim, Do-Kywn,Park, So Jeong,Koh, Yumin,Cho, Chu-Young,Kim, Gyu-Tae,Park, Kyung-Ho Elsevier 2018 MICROELECTRONIC ENGINEERING Vol.199 No.-

        <P><B>Abstract</B></P> <P>The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Electrical characteristics of AlGaN/GaN HEMTs with several parameters were investigated in detail. </LI> <LI> Series resistance (R<SUB>sd</SUB>) effect significantly causing degradation of effective mobility was de-embedded. </LI> <LI> Gate-to-channel capacitance (C<SUB>gc</SUB>) was obtained with eliminating the parasitic offset capacitance. </LI> <LI> Mobility degradation factors were discussed with interface quality issues. </LI> <LI> Carrier number fluctuation model with considering R<SUB>sd</SUB> effects explained well 1/f noise behavior of AlGaN/GaN HEMTs. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

      • KCI등재

        Degradation of fill factor in P3HT:PCBM based organic solar cells

        Vinamrita Singh 한국물리학회 2017 Current Applied Physics Vol.17 No.11

        In this paper, the degradation of fill factor with time of organic bulk heterojunction solar cells has been investigated up to 312 h. The experimental data of P3HT:PCBM solar cells has been analyzed theoretically to determine the parameters which affect the FF. The existing empirical formula has been applied to degradation data, and it was found to deviate drastically as the cell degrades, indicating that the correct behavior of solar cell is not imitated using the current FF formula. In view of the discrepancy, the expression for fill factor has been modified taking into account the material and device properties, which directly influence the working of a solar cell. All the values can be determined experimentally. The results of the modified expression gives better theoretical fit of FF with time. The results highlight the parameters which should be targeted in order to overcome the short lifetime of organic solar cells.

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