Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

다국어 초록 (Multilingual Abstract)

<P><B>Abstract</B></P> <P>The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Electrical characteristics of AlGaN/GaN HEMTs with several parameters were investigated in detail. </LI> <LI> Series resistance (R<SUB>sd</SUB>) effect significantly causing degradation of effective mobility was de-embedded. </LI> <LI> Gate-to-channel capacitance (C<SUB>gc</SUB>) was obtained with eliminating the parasitic offset capacitance. </LI> <LI> Mobility degradation factors were discussed with interface quality issues. </LI> <LI> Carrier number fluctuation model with considering R<SUB>sd</SUB> effects explained well 1/f noise behavior of AlGaN/GaN HEMTs. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>