Effects of endothelin family on ANP secretion

Yuan, K.,Park, B.M.,Choi, Y.T.,Kim, J.H.,Cho, K.W.,Kim, S.H. Pergamon [etc.] 2016 Peptides Vol.82 No.-

The endothelins (ET) peptide family consists of ET-1, ET-2, ET-3, and sarafotoxin (s6C, a snake venom) and their actions appears to be different among isoforms. The aim of this study was to compare the secretagogue effect of ET-1 on atrial natriuretic peptide (ANP) secretion with ET-3 and evaluate its physiological meaning. Isolated nonbeating atria from male Sprague-Dawley rats were used to evaluate stretch-activated ANP secretion in response to ET-1, ET-2, ET-3, and s6C. Changes in mean blood pressure (MAP) were measured during acute injection of ET-1 and ET-3 with and without natriuretic peptide receptor-A antagonist (A71915) in anesthetized rats. Changes in atrial volume induced by increased atrial pressure from o to 1, 2, 4, or 6cm H<SUB>2</SUB>O caused proportional increases in mechanically-stimulated extracellular fluid (ECF) translocation and stretch-activated ANP secretion. ET-1 (10nM) augmented basal and stretch-activated ANP secretion in terms of ECF translocation, which was blocked by the pretreatment with ET<SUB>A</SUB> receptor antagonist (BQ123, 1μM) but not by ET<SUB>B</SUB> receptor antagonist (BQ788, 1μM). ET<SUB>A</SUB> receptor antagonist itself suppressed stretch-activated ANP secretion. As compared to ET-1- induced ANP secretion (3.2-fold by 10nM), the secretagogue effects of ANP secretion by ET-2 was similar (2.8-fold by 10nM) and ET-3 and s6C were less potent (1.7-fold and 1.5-fold by 100nM, respectively). Acute injection of ET-1 or ET-3 increased mean blood pressure (MAP), which was augmented in the presence of natriuretic peptide receptor-A antagonist. Therefore, we suggest that the order of secretagogue effect of ET family on ANP secretion was ET-1≥ET-2>>ET-3>s6C and ET-1-induced ANP secretion negatively regulates the pressor effect of ET-1.

Chemically synthesized PbS Nano particulate thin films for a rapid NO₂ gas sensor

Burungale, Vishal V.,Devan, Rupesh S.,Pawar, Sachin A.,Harale, Namdev S.,Patil, Vithoba L.,Rao, V. K.,Ma, Yuan-Ron,Eun Ae, Jo,Kim, Jin H.,Patil, Pramod S. De Gruyter 2016 MATERIALS SCIENCE -WROCLAW- Vol.34 No.1

<P><B>Abstract</B></P><P>Rapid NO<SUB>2</SUB>gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO<SUB>2</SUB>gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO<SUB>2</SUB>gas was measured at different operating temperatures, from 50 to 200<SUP>°</SUP>C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150<SUP>°</SUP>C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO<SUB>2</SUB>at 150<SUP>°</SUP>C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.</P>

Report of the International Stem Cell Banking Initiative Workshop Activity: Current Hurdles and Progress in Seed‐Stock Banking of Human Pluripotent Stem Cells

Kim, Jung‐,Hyun,Kurtz, Andreas,Yuan, Bao‐,Zhu,Zeng, Fanyi,Lomax, Geoff,Loring, Jeanne F.,Crook, Jeremy,Ju, Ji Hyeon,Clarke, Laura,Inamdar, Maneesha S.,Pera, Martin,Firpo, Meri T.,Sheldon, John Wiley and Sons Inc. 2017 Stem cells translational medicine Vol.6 No.11

<P><B>Abstract</B></P><P>This article summarizes the recent activity of the International Stem Cell Banking Initiative (ISCBI) held at the California Institute for Regenerative Medicine (CIRM) in California (June 26, 2016) and the Korean National Institutes for Health in Korea (October 19–20, 2016). Through the workshops, ISCBI is endeavoring to support a new paradigm for human medicine using pluripotent stem cells (hPSC) for cell therapies. Priority considerations for ISCBI include ensuring the safety and efficacy of a final cell therapy product and quality assured source materials, such as stem cells and primary donor cells. To these ends, ISCBI aims to promote global harmonization on quality and safety control of stem cells for research and the development of starting materials for cell therapies, with regular workshops involving hPSC banking centers, biologists, and regulatory bodies. Here, we provide a brief overview of two such recent activities, with summaries of key issues raised. S<SMALL>TEM</SMALL> C<SMALL>ELLS</SMALL> T<SMALL>RANSLATIONAL</SMALL> M<SMALL>EDICINE</SMALL><I>2017;6:1956–1962</I></P>

Shear Thickening Polishing of Black Lithium Tantalite Substrate

B. H. Lyu,Q. Shao,W. Hang,S. H. Chen,Q. K. He,J. L. Yuan 한국정밀공학회 2020 International Journal of Precision Engineering and Vol.21 No.9

To achieve high efficiency in the polishing process to obtain a high surface quality of black LT substrate (a kind of soft brittle material), shear thickening polishing (STP), which is a “gentle” finishing process developed in recent years, was employed in this study. The influence of three key parameters in the STP process including polishing speed, diamond abrasive size and diamond abrasive concentration were analyzed. To investigate the potential mechanical effect of the nanometre abrasive, nano-SiO 2 abrasive particles were added in the slurry, and the concentration of SiO 2 abrasive was also taken as a factor. Taguchi method was utilized to evaluate the influence of the four factors and optimize the polishing conditions. The surface roughness (Ra/Rz) was used as the evaluation index, and the optimized polishing conditions were verified through experiments. Diamond abrasive size has the most significant effect on Ra/Rz, followed by diamond abrasive concentration and then SiO 2 concentration, as the polishing speed has been selected and limited in a small variation rang according to the previous study. Based on the S/N average response analysis, the surface quality is the best under the conditions with 8000# diamond abrasive, 5 wt% diamond abrasive concentration, 90 rpm polishing speed and 10 wt% SiO 2 concentration. After 4 min polishing, the surface roughness Ra/Rz is reduced rapidly from 200.5/1374.6 to 4.2/22.1 nm without embedded abrasive particles on the surface of the black LT substrate. It also shows that the mechanical effect plays a dominant role in the material removal. A certain amount (10 wt% in this study) of nano-SiO 2 can reduce friction between solid colloidal and workpiece, and helps to improve surface quality.

Graphitization of graphene oxide films under pressure

Chen, Xianjue,Deng, Xiaomei,Kim, Na Yeon,Wang, Yu,Huang, Yuan,Peng, Li,Huang, Ming,Zhang, Xu,Chen, Xiong,Luo, Da,Wang, Bin,Wu, Xiaozhong,Ma, Yufei,Lee, Zonghoon,Ruoff, Rodney S. Elsevier 2018 Carbon Vol.132 No.-

<P><B>Abstract</B></P> <P>Lightweight, flexible graphite foils that are chemically inert, high-temperature resistant, and highly electrically and thermally conductive can be used as component materials in numerous applications. “Graphenic” foils can be prepared by thermally transforming graphene oxide films. For this transformation, it is desirable to maintain a densely packed film structure at high heating rates as well as to lower the graphitizing temperatures. In this work, we discuss the pressure-assisted thermal decomposition of graphene oxide films by hot pressing at different temperatures (<I>i.e.</I>, 300 °C, 1000 °C, or 2000 °C). The films pressed at 1000 °C or 2000 °C were subsequently heated at 2750 °C to achieve a higher degree of graphitization. The combination of heating and pressing promotes the simultaneous thermal decomposition and graphitic transformation of G-O films. Films pressed at 2000 °C as well as films further graphitized at 2750 °C show high chemical purity, uniformity, and retain their flexibility. For films pressed at 2000 °C and then further heated at 2750 °C, the mechanical performances outperform the reported values of the “graphite” foils prepared by calendering exfoliated graphite flakes; the electrical conductivity is ∼3.1 × 10<SUP>5</SUP> S/m and the in-plane thermal conductivity is ∼1.2 × 10<SUP>3</SUP> W/(m·K).</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

Search for light tetraquark states in ϒ(1S) and ϒ(2S) decays

Jia, S.,Shen, C. P.,Yuan, C. Z.,Adachi, I.,Ahn, J. K.,Aihara, H.,Al Said, S.,Asner, D. M.,Atmacan, H.,Aushev, T.,Ayad, R.,Babu, V.,Badhrees, I.,Bahinipati, S.,Bakich, A. M.,Bansal, V.,Behera, P.,Berge American Physical Society 2017 Physical review. D Vol.96 No.11

<P>We search for the J(PC) = 0(--) and 1(+-) light tetraquark states with masses up to 2.46 GeV/c(2) in gamma(1S) and gamma(2S) decays with data samples of (102 +/- 2) million and (158 +/- 4) million events, respectively, collected with the Belle detector. No significant signals are observed in any of the studied production modes, and 90% credibility level (C. L.) upper limits on their branching fractions in Upsilon(1S) and Upsilon(2S) decays are obtained. The inclusive branching fractions of the Upsilon(1S) and Upsilon(2S) decays into final states with f(1)(1285) are measured to be B(Upsilon(1S) -> f(1)(1285) + anything) = (46 +/- 28(stat) +/- 13(syst)) x 10(-4) and B(Upsilon(2S) -> f(1)(1285) + anything) = (22 +/- 15(stat) +/- 6.3(syst)) x 10(-4). The measured chi(b2) -> J/Psi + anything branching fraction is measured to be (1.50 +/- 0.34(stat) +/- 0.22(syst)) x 10(-3), and 90% C. L. upper limits for the chi(b0;b1) -> J/Psi + anything branching fractions are found to be 2.3 x 10(-3) and 1.1 x 10(-3), respectively. For B(chi(b1) -> omega + anything), the branching fraction is measured to be (4.9 +/- 1.3(stat) +/- 0.6(syst) x 10(-2). All results reported here are the first measurements for these modes.</P>

Search for the 0−− glueball in ϒ(1S) and ϒ(2S) decays

Jia, S.,Shen, C. P.,Yuan, C. Z.,Adachi, I.,Aihara, H.,Al Said, S.,Asner, D. M.,Aushev, T.,Ayad, R.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Barberio, E.,Behera, P.,Bhuyan, B.,Biswal, J.,Bonvicin American Physical Society 2017 Physical Review D Vol.95 No.1

<P>We report the first search for the J(PC) = 0(--) glueball in Upsilon(1S) and Upsilon(2S) decays with data samples of (102 +/- 2) x 10(6) and (158 +/- 4) x 10(6) events, respectively, collected with the Belle detector. No significant signals are observed in any of the proposed production modes, and the 90% credibility level upper limits on their branching fractions in Upsilon(1S) and Upsilon(2S) decays are obtained. The inclusive branching fractions of the Upsilon(1S) and Upsilon(2S) decays into final states with chi(c1) are measured to be B(Upsilon(1S) -> chi(c1) + anything) = (1.90 +/- 0.43(stat) +/- 0.14(syst) x 10(-4) with an improved precision over prior measurements and B Upsilon(2S) -> chi(c1) + anything) = (2.24 +/- 0.44(stat) +/- 0.20(syst) x 10(-4) for the first time.</P>

Influence of Cooling Rate After Homogenization on Microstructure and Mechanical Properties of Aluminum Alloy 7050

S. D. Liu,Y.B.Yuan,C. B. Li,J. H. You,X. M. Zhang 대한금속·재료학회 2012 METALS AND MATERIALS International Vol.18 No.4

The influence of cooling rate (0.009-220 °C/s) after homogenization on the microstructure and mechanical properties of high strength aluminum alloy 7050 was investigated by tensile testing, optical microscope,X-ray diffraction, scanning electron microscope, and transmission electron microscope. A lower cooling rate after homogenization resulted in lower mechanical properties after aging. The drop in strength was significant when the cooling rate was decreased from 0.5 °C/s to 0.1 °C/s. A lower cooling rate gave rise to a larger amount of remnant S(Al2CuMg) phase and a higher fraction of recrystallization after solution heat treatment. Consequently, the increase in strength after aging due to precipitation hardening and substructure hardening was less significant in the case of slow cooling. This was supposed to be responsible for the lower mechanical properties due to a lower cooling rate after homogenization.

ITARS: trust-aware recommender system using implicit trust networks

Yuan, W,Shu, L,Chao, H.-C,Guan, D,Lee, Y.-K,Lee, S IET 2010 IET COMMUNICATIONS Vol.4 No.14

<P>Trust-aware recommender system (TARS) suggests the worthwhile information to the users on the basis of trust. Existing works of TARS suffers from the problem that they need extra user efforts to label the trust statements. The authors propose a novel model named iTARS to improve the existing TARS by using the implicit trust networks: instead of using the effort-consuming explicit trust, the easy available user similarity information is used to generate the implicit trusts for TARS. Further analysis shows that the implicit trust network has the small-world topology, which is independent of its dynamics. The rating prediction mechanism of iTARS is based on the small worldness of the implicit trust network: the authors set the maximum trust propagation distance of iTARS approximately equals the average path length of the trust network's corresponding random network. Experimental results show that with the same computational complexity, iTARS is able to improve the existing TARS works with higher rating prediction accuracy and slightly worse rating prediction coverage.</P>

Characterization of FePt Sputtered Films by Post-annealing

S. N. Hsiao,S. K. Chen,Y. W. Hsu,H. W. Huang,F. T. Yuan,H. Y. Lee,W. C. Chang 한국자기학회 2007 한국자기학회 학술연구발표회 논문개요집 Vol.- No.-