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Ä Ö Ü ä ö ü ß
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‘ ’ “ ” 〔 〕 〈 〉 「 」 『 』 【 】 ＂ （ ） ［ ］ ｛ ｝
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½ ⅓ ⅔ ¼ ¾ ⅛ ⅜ ⅝ ⅞ ¹ ² ³ ⁴ ⁿ ₁ ₂ ₃ ₄
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      저자 : Yongbiao Qian (검색결과 3 건)
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        In-Doped CdZnTe Crystal Growth under Controlled Te Partial Pressure

        Yongbiao Qian,Wenbin Sang,Gang Li,Jiahua Min,Zhubin Shi,Chenying Zhou 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

        In-doped CdZnTe (CZT) crystals have been investigated under controlled Te partial pressure. The dependence of the electrical properties on the In dopant concentration under fixed Te partial pressure and the dependence on Te partial pressure under fixed In dopant concentration are presented. The optimized growth parameters, such as Te partial pressure, In dopant concentration, etc., were obtained for preparing In-doped CZT crystal of high resistivity up to 1010 cm. In addition, based on an In-doped compensation mechanism in CZT crystals is discussed.

      • KCI등재

        In uence of In dopant on PL Spectra of CdZnTe Crystals

        Jianyong Teng,Wenbin Sang,Gang Li,Zhubin Shi,Jiahua Min,Dongni Hu,Yongbiao Qian 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

        Photoluminescence (PL) spectra are used to characterize the high resistivity of an In-doped CdZnTe (CZT) crystal. The features of the PL spectra vary with changing In-dopant concentration, indicating that the In-dopant concentration has a great impact on the defect type and density and on the extent of compensation in the In-doped CZT crystal. With the addition of In donors, a new sharp neutral donor bound exciton [D0, X] peak at 1.65 eV, corresponding to In substituting defect (In+ Cd) and a new defect complex band centered at 1.505 eV, related to the singly negative complex (VCd-InCd)- are observed. Meanwhile, the intensity and position of the feature peaks in PL spectra vary with the change of the In dopant concentration, representing the changes of the defect type and density and the extent of compensation in the crystal. It conrms that the Cd vacancy or residual impurity acceptors are dominantly compensated by In donors. The measured conduction type and carrier densities are the results of compensation between Cd vacancies and In donors and Te antisites, which are related to the In-dopant concentration and the stoichiometry for the CZT crystal. Photoluminescence (PL) spectra are used to characterize the high resistivity of an In-doped CdZnTe (CZT) crystal. The features of the PL spectra vary with changing In-dopant concentration, indicating that the In-dopant concentration has a great impact on the defect type and density and on the extent of compensation in the In-doped CZT crystal. With the addition of In donors, a new sharp neutral donor bound exciton [D0, X] peak at 1.65 eV, corresponding to In substituting defect (In+ Cd) and a new defect complex band centered at 1.505 eV, related to the singly negative complex (VCd-InCd)- are observed. Meanwhile, the intensity and position of the feature peaks in PL spectra vary with the change of the In dopant concentration, representing the changes of the defect type and density and the extent of compensation in the crystal. It conrms that the Cd vacancy or residual impurity acceptors are dominantly compensated by In donors. The measured conduction type and carrier densities are the results of compensation between Cd vacancies and In donors and Te antisites, which are related to the In-dopant concentration and the stoichiometry for the CZT crystal.

      • KCI등재

        Passivation Layer of CdZnTe as Studied by Spectroscopic Ellipsometry

        Jianyong Teng,Wenbin Sang,Yue Lu,Yanyan Lou,Jiahua Min,Xiaoyan Liang,Kaifeng Qin,Yongbiao Qian 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

        An oxidized layer was obtained on a cadmium zinc telluride (CZT) wafer by using chemical etching first in a KOH-KCl solution and then in an NH4F/H2O2 solution. The oxidized layer on the CZT obtained by using this method was analyzed by using ex-situ spectroscopic ellipsometry (SE) for the first time. In particular, the optical constants and the thickness of the chemical oxidized layer were obtained as functions of the oxidizing time.

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