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산처리 공정에 따라 추출한 돈피 젤라틴의 이화학적 특성에 관한 연구
염건웅,민상기,Yeom Geun-Woong,J Andrieu,Min Sang-Gi 한국축산식품학회 2004 한국축산식품학회지 Vol.24 No.3
The objective of this study was to investigate the physicochemical characteristics of gelatin extracted from pork skin under soaking in various acid solutions (lactic acid, acetic acid, and citric acid). Gelatin sol was extracted at 8$0^{\circ}C$, frozen at -2$0^{\circ}C$ and lyophilized it for 3 days to be completely dried in freeze drying unit. In the evaluation of gelatin quality, gelatin soaked in citric acid showed higher L- and a-values than those of any other gelatin (p<0.05). Gelatin treated by acetic acid showed the highest gel strength, cohesiveness, and brittleness. The content of hydroxyproline amino acid in gelatin treated by acetic acid was larger than one of gelatin treated in lactic and citric acid in order. From the experimental results, the highest quality of gelatin in all of period, which was soaked in acetic acid and lactic acid, has a more good quality than gelatin soaked in citric acid. 본 연구는 gelatin의 생산공정에서 각종 산 처리가 최종 gelatin의 품질에 어떤 영향을 주는지를 평가함으로써 양질의 gelatin을 생산하는데 기초를 제공하고자 하였다. Gelatin gel의 물성은 lactic acid로 처리한 gelatin이 높은 hardness, cohesiveness, brittleness를 나타내었고 다음으로는 citric acid, acetic acid 순으로 나타났다. Gelatin의 색도는 citric acid, 처리한 gelatin이 acetic acid나 lactic acid로 산침한 젤라틴 보다 높은 명도를 나타냈다. a-value는 acetic acid로 산침한 gelatin이 가장 높게 나타났으며 황색도를 나타내는 b-value는 lactic > acetic acid > citric acid 순으로 높게 나타났다. Gelatin의 점도를 측정한 결과 전단속도(shear rate)에 대한 전단응력(shear stress)의 관계는 모두 전단속도가 증가함에 따라 전단응력이 증가하는Newton성 유체로 판단되었다. 그 기울기는 acetic acid로 산침한 것이 가장 높게 나타났으며 lactic acid, citric acid 순으로 높게 나타났다. Gelatin내의 hydroxyproline 함량을 살펴보면 acetic acid(0.186 g/100 g sample)로 가장 높은 수치를 나타나며 다음으로 lactic acid, citric acid 순으로 나타났다. 그러나, sample중 crude protein 함량을 비교하면 acetic acid(68.74%), lactic acid(80.08%), citric acid(85.47%)로 나타났다. 이것은 gelatin의 열수 추출시 가장 작게 용출된 acetic acid가 가장 높은 collagenous connective tissue 함량(1.35 g/100g)을 나타내었다.
Atomic layer etching of ultra-thin HfO<sub>2</sub> film for gate oxide in MOSFET devices
Park, Jae Beom,Lim, Woong Sun,Park, Byoung Jae,Park, Ih Ho,Kim, Young Woon,Yeom, Geun Young Institute of Physics [etc.] 2009 Journal of Physics. D, Applied Physics Vol.42 No.5
<P>Precise etch depth control of ultra-thin HfO<SUB>2</SUB> (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl<SUB>3</SUB> gas. A monolayer etching condition of 1.2 Å/cycle with a low surface roughness and an unchanged surface composition was observed for ultra-thin, ALET-etched HfO<SUB>2</SUB> by supplying BCl<SUB>3</SUB> gas and an Ar beam at higher levels than the critical pressure and dose, respectively. When HfO<SUB>2</SUB>-nMOSFET devices were fabricated by ALET, a 70% increase in the drain current and a lower leakage current were observed compared with the device fabricated by conventional reactive ion etching, which was attributed to the decreased structural and electrical damage.</P>
Ferrite-Enhanced U-Shaped Internal Antenna for Large-Area Inductively Coupled Plasma System
Kyong Nam Kim,Jong Hyeuk Lim,Woong Sun Lim,Geun Young Yeom IEEE 2010 IEEE transactions on plasma science Vol.38 No.2
<P>A Ni-Zn ferrite-enhanced U-shaped internal inductive antenna (240 mm × 2300 mm) operated at 2 MHz was used as a linear plasma source for an ultralarge-area plasma, and its plasma and electrical characteristics were investigated and compared with those of the antenna operated at 13.56 MHz without the ferrite. By the magnetic field enhancement, the operation of the source showed higher power transfer efficiency, lower antenna impedance, and lower RF rms voltage compared to that operated at 13.56 MHz without the ferrite. When photoresist etch uniformity was measured by etching the photoresist using a 40-mtorr Ar/O<SUB>2</SUB> (7:3) mixture at 2 MHz by locating three U-shaped antennas in parallel, the etch uniformity less than 11% could be obtained on the substrate size of 2300 mm × 2000 mm.</P>
Low-temperature wafer-scale growth of MoS<sub>2</sub>-graphene heterostructures
Kim, Hyeong-U,Kim, Mansu,Jin, Yinhua,Hyeon, Yuhwan,Kim, Ki Seok,An, Byeong-Seon,Yang, Cheol-Woong,Kanade, Vinit,Moon, Ji-Yun,Yeom, Geun Yong,Whang, Dongmok,Lee, Jae-Hyun,Kim, Taesung Elsevier 2019 APPLIED SURFACE SCIENCE - Vol.470 No.-
<P><B>Abstract</B></P> <P>In this study, we successfully demonstrate the fabrication of a MoS<SUB>2</SUB>-graphene heterostructure (MGH) on a 4 inch wafer at 300 °C by depositing a thin Mo film seed layer on graphene followed by sulfurization using H<SUB>2</SUB>S plasma. By utilizing Raman spectroscopy and high-resolution transmission electron microscopy, we have confirmed that 5–6 MoS<SUB>2</SUB> layers with a large density of sulfur vacancies are grown uniformly on the entire substrate. The chemical composition of MoS<SUB>2</SUB> on graphene was evaluated by X-ray photoelectron spectroscopy, which confirmed the atomic ratio of Mo to S to be 1:1.78, which is much lower than the stoichiometric value of 2 from standard MoS<SUB>2</SUB>. To exploit the properties of the nanocrystalline and defective MGH film obtained in our process, we have utilized it as a catalyst for hydrodesulfurization and as an electrocatalyst for the hydrogen evolution reaction. Compared to MoS<SUB>2</SUB> grown on an amorphous SiO<SUB>2</SUB> substrate, the MGH has smaller onset potential and Tafel slope, indicating its enhanced catalytic performance. Our practical growth approach can be applied to other two-dimensional crystals, which are potentially used in a wide range of applications such as electronic devices and catalysis.</P> <P><B>Highlight</B></P> <P> <UL> <LI> Practical growth for 2D MoS<SUB>2</SUB>-graphene heterostructure (MGH) was introduced. </LI> <LI> Low-temperature sulfurization of Mo thin film was realized by H<SUB>2</SUB>S plasma. </LI> <LI> As-grown MoS<SUB>2</SUB> film on graphene naturally contains large number of active sites. </LI> <LI> The MGH was shown enhanced electrocatalytic performance. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>