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RISS 인기검색어
- 검색키워드
- 저자 : Toshiro Doi (검색결과 3 건)
- 무료
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Characteristic of SiC Slurry in Ultra Precision Lapping of Sapphire Substrates
Tao Yin,ZhiDa Wang,Toshiro Doi,Syuhei Kurokawa,Zhe Tan,XiaoKang Ding,Huan Lin 한국정밀공학회 2021 International Journal of Precision Engineering and Vol.22 No.6
A method is proposed in this paper to prepare a SiC slurry with SiC particles selected by an ultrasonic-assisted elutriation method to reduce substrate surface damage caused by abrasive particles during lapping. Sapphire substrate lapping experiments were carried out using the prepared SiC slurry, and the lapping performance of the slurry was analyzed. The experimental results show that the SiC particle size is a factor that directly affects the material removal rate and surface roughness Ra, of sapphire substrates. When a SiC slurry with a particle size of 630 nm was used, the material removal rate was 508 nm/h, and the surface roughness Ra was 1.9 nm; increasing the slurry concentration and the platen rotating speed can improve the material removal rate. In addition, the agglomeration of SiC particles in the slurry depends on the pH of the slurry. Efficient precision lapping of sapphire substrates can be achieved by selecting appropriately sized SiC particles and by adjusting the slurry pH to control the agglomeration and dispersion of SiC particlesto further reduce the scratches on the substrate surface during the lapping process.
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Development of a Pad Conditioning Method for ILD CMP using a High Pressure Micro Jet System
Hyosang Lee,Darren DeNardis,Ara Philipossian,Yoshiyuki Seike,Mineo Takaoka,Keiji Miyachi,Toshiro Doi 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.1
The goal of this study is to determine if High Pressure Micro Jet (HPMJ) conditioning can be used as a substitute for, or in conjunction with, conventional diamond pad conditioning. Five conditioning methods were studied during which 50 ILD wafers were polished successively in a 100-mm scaled polisher and removal rate (RR), coefficient of friction (COF), pad flattening ratio (PFR) and scanning electron microscopy (SEM) measurements were obtained. Results indicated that PFR increased rapidly, and COF and removal rate decreased significantly, when conditioning was not employed. With diamond conditioning, both removal rate and COF were stable from wafer to wafer, and low PFR values were observed. SEM images indicated that clean grooves could be achieved by HPMJ pad conditioning, suggesting that HPMJ may have the potential to reduce micro scratches and defects caused by slurry abrasive particle residues inside grooves. Regardless of different pad conditioning methods, a linear correlation was observed between temperature, COF and removal rate, while an inverse relationship was seen between COF and PFR.
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Development of a Pad Conditioning Method for ILD CMP using a High Pressure Micro Jet System
Lee, Hyo-Sang,DeNardis, Darren,Philipossian, Ara,Seike, Yoshiyuki,Takaoka, Mineo,Miyachi, Keiji,Doi, Toshiro The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.1
The goal of this study is to determine if High Pressure Micro Jet (HPMJ) conditioning can be used as a substitute for, or in conjunction with, conventional diamond pad conditioning. Five conditioning methods were studied during which 50 ILD wafers were polished successively in a 100-mm scaled polisher and removal rate (RR), coefficient of friction (COF), pad flattening ratio (PFR) and scanning electron microscopy (SEM) measurements were obtained. Results indicated that PFR increased rapidly, and COF and removal rate decreased significantly, when conditioning was not employed. With diamond conditioning, both removal rate and COF were stable from wafer to wafer, and low PFR values were observed. SEM images indicated that clean grooves could be achieved by HPMJ pad conditioning, suggesting that HPMJ may have the potential to reduce micro scratches and defects caused by slurry abrasive particle residues inside grooves. Regardless of different pad conditioning methods, a linear correlation was observed between temperature, COF and removal rate, while an inverse relationship was seen between COF and PFR.
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