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Liu, Chuan,Liu, Xuying,Minari, Takeo,Kanehara, Masayuki,Noh, Yong-Young The Korean Infomation Display Society 2018 Journal of information display Vol.19 No.2
Recent studies on organic thin-film transistors (OTFTs) have reported high mobility values, but many of them showed non-ideal current-voltage characteristics that could lead to the overestimation of the mobility values. In this study, the non-ideal transistor behavior was briefly investigated by considering the effect of charge injection, and a method of overcoming the effect was developed. Correspondingly, various charge injection layers were developed, and their effects on the modification of metal contacts, including work function tuning and interfacial doping, were studied. The materials that had been coated formed a good metal-semiconductor interface through fine manipulation in the wetting and dewetting of the selected liquid. With such electrodes, the OTFTs were fabricated at room temperature and exhibited almost ideal transistor behavior in terms of the current-voltage characteristics, featuring high (over $10cm^2/Vs$) field-effect mobility.
Organic thin-film transistors with over 10 cm2/Vs mobility through low-temperature solution coating
Chuan Liu,Xuying Liu,Takeo Minari,Masayuki Kanehara,노용영 한국정보디스플레이학회 2018 Journal of information display Vol.19 No.2
Recent studies on organic thin-film transistors (OTFTs) have reported high mobility values, but many of them showed non-ideal current–voltage characteristics that could lead to the overestimation of the mobility values. In this study, the non-ideal transistor behavior was briefly investigated by considering the effect of charge injection, and a method of overcoming the effect was developed. Correspondingly, various charge injection layers were developed, and their effects on the modification of metal contacts, including work function tuning and interfacial doping, were studied. The materials that had been coated formed a good metal-semiconductor interface through fine manipulation in the wetting and dewetting of the selected liquid. With such electrodes, the OTFTs were fabricated at room temperature and exhibited almost ideal transistor behavior in terms of the current–voltage characteristics, featuring high (over 10 cm2/Vs) field-effect mobility.
Ultra-high-resolution printing of flexible organic thin-film transistors
Xuying Liu,Masayuki Kanehara,Chuan Liu,Takeo Minari 한국정보디스플레이학회 2017 Journal of information display Vol.18 No.2
Fully printed electronics on plastic have attracted considerable interest owing to their high compatibility and ease of integration. Here, an ultra-high-resolution printing technique based on parallel vacuum ultraviolet patterning that can produce high-contrast wettability regions on flexible substrates was developed. This technique was used to selectively deposit a functional ink with a 1μm feature size, thereby allowing the large-scale fabrication of organic thin-film transistors with channels as short as 1μm under an ambient atmosphere. Moreover, in short-channel devices, hole injection barriers can be tuned by printing the optimum gate overlaps associated with selectively doping semiconductor/electrode interfaces, resulting in a marked reduction in contact resistance from 20 to 1.5, and an elevation of the charge carrier mobility to a record high of 0.3 cm2 V−1 s−1 in a 1-μm-channel device. The results indicate that the developed technique is promising for the fabrication of large-area, high-resolution, low-cost electronics.
Liu, Chuan,Huang, Kairong,Park, Won-Tae,Li, Minmin,Yang, Tengzhou,Liu, Xuying,Liang, Lijuan,Minari, Takeo,Noh, Yong-Young Royal Society of Chemistry 2017 Polymer Chemistry Vol.4 No.4
<▼1><P>The generalized Einstein relation (GER) can unify various theoretical models and predict charge transport in OSCs with various crystallinities, by altering the variance of the density of states and the delocalization degree in a Gaussian-distributed density of states.</P></▼1><▼2><P>The variety of charge transport theories for organic semiconductors (OSCs) raises the question of which models should be selected for each case, and there is a lack of generalized understanding regarding various OSCs over the full range of crystallinity from single crystal to amorphous. Here, we report that the generalized Einstein relation (GER) can unify various theoretical models and predict charge transport in OSCs with various crystallinities, by altering the variance of the density of states and the delocalization degree in a Gaussian-distributed density of states. The GER also provides a good fitting to much of the experimental data of temperature- and gate-voltage-dependent mobility for different OSCs in transistors. Consequently, disorders of charge transport in various OSCs can be directly compared in the same map, which reveals how energetic disorder and the delocalization degree determine charge transport in organic devices.</P></▼2>