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- 저자 : Sunkook Kim (검색결과 69 건)
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Sunkook Kim,Woong Choi,Woojin Rim,Youngtea Chun,Hongsik Shim,Hyukjun Kwon,Jongsoo Kim,Inseo Kee,Sungchul Kim,SangYoon Lee,Jongsun Park IEEE 2011 IEEE transactions on electron devices Vol.58 No.10
<P>This paper presents ultrathin and highly sensitive input/output devices consisting of a capacitive touch sensor (Cap-TSP) integrated on thin-film-encapsulated active-matrix organic light-emitting diodes (OLEDs). The optimal structure of the electrically noise-free capacitive touch sensor, which is assembled on a thin-film-encapsulated active-matrix OLED (AMOLED) display, is obtained by investigating the internal electrical field distribution and capacitance change based on the Q3D Extractor model. Electrostatic simulations have verified malfunction-free electrical signals for 4-in diagonal-sized capacitive touch sensors on AMOLEDs possessing a 100-μm-thick optically clear adhesive (OCA, ε<I>r</I> = 1.4) layer. The prototype OLED platform using the capacitive touch sensors exhibits an overall thickness of 1.2 mm, which is the lowest thickness for commercially available OLED platforms.</P>
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Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor
Kim, Hyoung-Do,Kim, Jong Heon,Park, Kyung,Park, Yun Chang,Kim, Sunkook,Kim, Yong Joo,Park, Jozeph,Kim, Hyun-Suk American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.18
<P>In this study, the properties of indium oxynitride (InON) semiconductor films grown by reactive radio frequency sputtering were examined both experimentally and theoretically. Also, thin-film transistors (TFTs) incorporating InON as the active layer were evaluated for the first time. It is found that InON films exhibit high stability upon prolonged exposure to air and the corresponding TFTs are more stable when subjected to negative bias illumination stress, compared to devices based on indium oxide (In<SUB>2</SUB>O<SUB>3</SUB>) or zinc oxynitride (ZnON) semiconductors. X-ray photoelectron spectroscopy analyses of the oxygen 1s peaks suggest that as nitrogen is incorporated into In<SUB>2</SUB>O<SUB>3</SUB> to form InON, the relative fraction of oxygen-deficient regions decreases significantly, which is most likely to occur by having the valence band maximum shifted up. Density functional theory calculations indicate that the formation energy of InN is much lower than Zn<SUB>3</SUB>N<SUB>2</SUB>, thus accounting for the higher stability of InON compared to ZnON in air.</P> [FIG OMISSION]</BR>
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Choi, Woong,Cho, Mi Yeon,Konar, Aniruddha,Lee, Jong Hak,Cha, Gi‐,Beom,Hong, Soon Cheol,Kim, Sangsig,Kim, Jeongyong,Jena, Debdeep,Joo, Jinsoo,Kim, Sunkook WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.43
<P>Sunkook Kim, Jinsoo Joo, and co‐workers demonstrate on page 5832 phototransistors based on multilayer MoS<SUB>2</SUB> crystals with a wider spectral response and higher photoresponsivity than single‐layer MoS<SUB>2</SUB> phototransistors. These multilayer MoS<SUB>2</SUB> phototransistors also exhibit high room‐temperature mobilities, near‐ideal subthreshold swings, low operating gate biases, and negligible shifts in the threshold voltages during illumination. </P>
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