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Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions
이규석,Doo-HyubYoon,Sung-BumBae,Mi-RanPark,김길호 한국전자통신연구원 2002 ETRI Journal Vol.24 No.4
We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the Hartree and exchange-correlation interaction. We calculate the dependence of electron sheet concentration and subband energies on various structural parameters, such as the width and Al mole fraction of AlGaN, the density of donor impurities in AlGaN, and the density of acceptor impurities in GaN, as well as the electron temperature. The electron sheet concentration was sensitively dependent on the Al mole fraction and width of the AlGaN layer and the doping density of donor impurities in the AlGaN. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.
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Current Dispersion E ects of Planar-Type AlGaN/GaN HFET's Grown by MOCVD
Chang-SeokKim,Jin-SikYun,Byung-KwonChoi,Jae-EungOh,Sung-BumBae,Jung-HeeLee,Jong-WookKim,Jae-SeungLee,Jin-HoShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.2
Low frequency-transconductance dispersion and pulsed I-V measurements have been taken on a planar-type an AlGaN/GaN heterostructure field-effect transistor (HFET) to study the effect of trap states on its current-voltage (I-V) characteristics. The transconductance as a function of frequency ranging from 1 Hz to 100 kHz was measured at various temperatures and bias conditions. We have observed the existence of electron traps associated with the surface states or bulk traps. These electron traps are responsible for the decrease of the transconductance and the drain current collapse. From the Arrhenius plot, a relatively slow state with an activation energy of 47.2 meV has been identified. To expect microwave power performance of the device, the pulsed I-V characteristic was measured in dierent class operations. A model to explain the observed current collapse has been suggested.
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