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H. Asaoka,T. Yamazaki,S. Shamoto 한국물리학회 2008 Current Applied Physics Vol.8 No.3,4
We have focused on the stress evolution during initial growth stage of Ge nanodots on H-terminated Si(111) 1×1 and Si(111) 7×7corresponding to a StranskiKrastanow growth mode, when the wetting layer thickness approaches the critical value for three-dimen-sional nucleation. In case of the deposition on H-terminated Si(111) 1×1 surface, the rst Ge sub-bilayer shows tensile stress followedby compressive stress. The unique behavior demonstrates the important role of one atomic layer of H termination to control the intrinsicstress for nanodot fabrication.
G. Tanimu,B.R. Jermy,S. Asaoka,S. Al-Khattaf 한국공업화학회 2017 Journal of Industrial and Engineering Chemistry Vol.45 No.-
The effect of metal oxide species in (Ni, Fe and/or Co) oxide-Bi2O3 over gamma-alumina support wasinvestigated for n-butane oxidative dehydrogenation. Partial substitution of Ni up to 50% by Fe improvedbutadiene selectivity while same substitution with Co increased n-butane conversion. The ternary Ni-Fe-Co system (10 wt% Ni–5 wt% Fe–5 wt% Co–30 wt% Bi-O/gamma-Al2O3) showed the highest butadieneselectivity of 46.3% at n-butane conversion of 30%. The acid-base sites preferably adjusted by ternarymain metal combination in hierarchical cohabitation of metal (Ni, Fe and Co) oxide, Bi2O3 and gamma-Al2O3 cooperate to accelerate butadiene selectivity at both 1st and 2nd step dehydrogenations due to anincreased H2 abstraction and 1-butene intermediate adsorption.