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RISS 인기검색어
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- 저자 : Radhapiyari Laishram (검색결과 3 건)
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Low frequency magnetoelectric effect in Bi0.5Na0.5TiO3-Ni0.5Zn0.5Fe2O4 particulate composites
Parminder Singh,Radhapiyari Laishram,Jayant Kolte,Jayant Kolte,Puneet Sharma 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.5
We report structural, dielectric, ferroelectric, magnetic, and low frequency magnetoelectric ( ME ) properties of (1− x ) Bi 0.5 Na 0.5 TiO 3 (BNT)– x Ni 0.5 Zn 0.5 Fe 2 O 4 (NZFO) (x = 0.05–0.30) microwave sintered particulate composites. Distinct phases of BNT and NZFO were confi rmed by X-ray diff raction and scanning electron microscopy. Raman spectroscopy measurement showed the absence of micro-strains within the composite. The temperature dependent dielectric studies revealed the ferroelectric to anti-ferroelectric transition at 220 °C and anti-ferroelectric to paraelectric transition at 320 °C. The ac conductivity showed both frequency dependent and independent behavior. Temperature dependent dc conductivity showed that upto 200 °C charge conduction is due to hopping of electrons, whereas at higher temperature diff usion of oxygen vacancies are responsible for the conduction. Ferroelectric and leakage current density measurements showed enhanced conduction losses with NZFO content. The maximum ME coeffi cient at 10 Hz frequency is obtained for 0.80BNT–0.20NZFO (4.33 mV/ cm.Oe at 800 Oe).
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Roopam Gaur,K. Chandramani Singh,Radhapiyari Laishram 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.5
The present work is an attempt towards understanding the effect of sintering parameters on thevarious morphological, electrical and piezoelectric properties of (K0.48Na0.48Li0.04) (Nb0.96Sb0.04)O3 (KNLNS) ceramics. We first synthesized the powder composition from various raw materialsby using a conventional solid-state reaction method followed by high-energy ball milling. Thepowder sample was then sintered under various sintering conditions with temperatures rangingfrom 1050◦C to 1090◦C and durations from 2 h to 3 h. The ceramic samples so obtained werethen characterized for various properties. The density was found to increase significantly within anarrow temperature range, but tended to decrease when the sintering temperature slightly exceededthe optimal one. Also, by merely reducing the duration of sintering from 3 h to 2 h while keeping thetemperature constant, we observed an enhancement in the density of the ceramics by about 10% ∼20%. The room-temperature dielectric constant (εRT ), the electromechanical coupling factor (kp)and the piezoelectric charge constant (d33) were found to vary with the sintering parameters. Thestudy reveals the necessity for striking a strict balance between the sintering temperature and thesintering period in order to improve the microstructural, dielectric and piezoelectric properties ofsuch a ceramic composition containing highly-volatile alkaline members.
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Rohit Sharma,Ashish Kumar,Anit Dawar,Sunil Ojha,Ambuj Mishra,Anshu Goyal,Radhapiyari Laishram,V. G. Sathe,RITU SRIVASTAVA,Om Prakash Sinha 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.2
Field effect transistors (FETs) are considered as the backbone of electronic industry. In this study, we adopted a simple drop cast method for the fabrication of MoS2 and WS2 channel based FET on commercially available pre-patterned OFET devices. The synthesis of few-layers thick MoS2 and WS2 nanosheets (NSs) has been done by solvent-assisted exfoliation method. FESEM and TEM study reveals that NSs have lateral dimensions in micron and have polycrystalline nature. From XPS, it is observed that MoS2 NSs has 2H phase whereas WS2 have hybrid 1T and 2H phase. The frequency difference in Raman vibrational mode for MoS2 and WS2 NSs is 24.08 cm-1 and 63.84 cm-1 respectively, confirms that number of layers is reduced after sonication. UV-visible spectroscopy reveals that the bandgap is 1.7 eV and 1.8 eV for MoS2 and WS2 NSs respectively. Later, these nanosheets have been drop-casted as the channel material on pre-patterned FETs devices and their output and transfer characteristics have been studied. It found that the current On/Off ratio is 10 4 and 10 3 for MoS 2 and WS2-FET device respectively. This facile fabrication of FET devices may provide a new stage for researchers who do not have access of lithography facilities for FET fabrication.
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