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      • KCI등재

        X-ray photoelectron spectroscopic studies of CeO2 thin films deposited on Ni-W (100), c-Al2O3 (0001) and Si (100) substrates

        Preetam Singh,K.M.K. Srivatsa,Arun Barvat,Prabir Pal 한국물리학회 2016 Current Applied Physics Vol.16 No.10

        The oxidation states of CeO2 films, deposited on biaxially textured Ni-W(100), c-Al2O3(0001) and Si(100) substrates, were investigated by using X-ray photoelectron spectroscopy (XPS). The CeO2 films were deposited by RF magnetron sputtering under same deposition conditions. X-ray diffraction (XRD) studies of the films revealed that preferred (200) orientation of CeO2 was observed in case of Ni-W substrate while (111) orientation on Al2O3 and Si substrates. The O1s and Ce3d spectra reveal that the films mostly consist of Ce4þ oxidation states with ~72.6%, 74.7% and 74.9% on Ni-W, Al2O3 and Si substrates, respectively. The less Ce4þ content in case of Ni-W substrate has been attributed to the migration of oxygen atoms from film to the metallic substrate. The decrease of O2p states in the valence band spectra also in support with the presence of more oxygen vacancies in CeO2/Ni-W compared to that in other substrates. Further, the position of valance band maxima is almost identical (~2.6 eV) for all the deposited films indicating that all films are n-type in nature.

      • KCI등재

        Magnetic and Electric Properties of Ba-doped BiFeO3 Epitaxial Thin Films Prepared by Pulsed Laser Deposition

        Preetam Singh,K.D. Sung,Y.A. Park,N. Hur,정종훈 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2

        We report the structural, magnetic and electric properties of epitaxial Ba-doped BiFeO3 (BBFO), i.e., Bi0.75Ba0.25FeO3−δ, thin films grown on SrRuO3/SrTiO3 (001) substrates by pulse laser deposition technique. At oxygen partial pressures of 500 mTorr and a substrate temperature of 600 ℃, pure and epitaxial BBFO thin film is grown without any Fe2O3 and Fe3O4 impurities. Ba2+ doping in BiFeO3 seems to induce a suppression of the antiferromagnetic spiral spin structure and the change of Fe-O-Fe bonding angle, in addition to the creation of oxygen vacancies. Hence, the BBFO film shows weak ferromagnetism, but a leaky dielectric behavior at room temperature. Thermally-activated hopping is found to be the main conduction mechanism in BBFO with an activation energy of 0.52 eV.

      • KCI등재

        Synthesis of CeO2 Microcrystals Fabricated on Biaxially Textured Ni-W Substrate by using an E-Beam Evaporation Technique

        Sourav Das,Preetam Singh,KMK Srivatsa 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.5

        Cerium-oxide (CeO2) microcrystals have been synthesized on a biaxially textured Ni-5%W (200)substrate by using the Electron beam (e-beam) evaporation technique with CeO2 powder as thesource material. The substrate temperature and electron beam gun power at which the microcrystalswere formed were 400◦C and 400 W, respectively. The X-ray diffraction (XRD) analysis confirmedthe crystallinity and a (111) orientation of the CeO2 crystals. Scanning electron microscope (SEM)image showed that the CeO2 crystals had large lateral dimensions in the range from 0.5 to 2.0 μm. The Raman spectrum shows only one peak at 464 cm−1 corresponding to the of F2g mode of theCeO2 crystals. No reports are available on the preparation of CeO2 crystals with such a large sizeon textured Ni-W substrate by using e-beam evaporation technique.

      • KCI등재

        Recent progress and growth in biosensors technology: A critical review

        Utkarsh Chadha,Preetam Bhardwaj,Rushali Agarwal,Priyanshi Rawat,Rishika Agarwal,Ishi Gupta,Mahek Panjwani,Shambhavi Singh,Chirag Ahuja,Senthil Kumaran Selvaraj,Murali Banavoth,Prashant Sonar,Badrish B 한국공업화학회 2022 Journal of Industrial and Engineering Chemistry Vol.109 No.-

        Crucial exploitation of biosensors has attained dominant significance in the meadow of drug innovation,drug identification, bio-remedy, food protection principles, security, protection, and ecological examination. It has direct to the innovation of specific and authoritative diagnostic tools that employ biologicalsensing elements as biosensors. Glucometers employ oxygen or hydrogen peroxide electrochemicalrecognition utilizing immobilized glucose oxidase electrodes, showing biosensors’ invention. Currentadvances in biological methods and instrumentation relating to fluorescence tags to nano-materials haveincreased the responsive limit of biosensors. The use of aptamers or nucleotides, antibodies, peptidearrays, and molecule imprinted polymers offer tools to build up novel biosensors over the classicalmethod. Integrated methods offer an improved perception for a buildup of precise and responsive biosensorswith high regenerative potentials. Various biosensors ranging from nanomaterials polymers tomicrobes have more comprehensive potential applications. Combining multifaceted approaches to designbiosensors that comprise the prospective for different usage is reasonably significant. In light of this, thisreview provides an overview of different types of biosensors being used, ranging from electrochemicaland fluorescence tagged, nanomaterials, silica or quartz, and microbes for various biomedical and environmentalapplications with the future outlook of biosensor technology.

      • KCI등재

        Effect of balanced and unbalanced magnetron sputtering processes on the properties of SnO2 thin films

        Gauri Shanker,P. Prathap,K.M.K. Srivatsa,Preetam Singh 한국물리학회 2019 Current Applied Physics Vol.19 No.6

        A comparative study has been carried on the role of balanced magnetron (BM) and unbalanced magnetron (UBM) sputtering processes on the properties of SnO2 thin films. The oxygen partial pressure, substrate temperature and deposition pressure were kept 20%, 700 °C and 30 mTorr, respectively and the applied RF power varied in the range of 150–250 W. It is observed that the UBM deposition causes significant effect on the structural, electrical and optical properties of SnO2 thin films than BM as evidenced by X-ray diffraction, C-V, Spectroscopic Ellipsometer and Photoluminescence measurements. The value of band gap (Eg) of the films deposited at 150W in UBM is found as Eg=3.83 eV which is much higher than the value of Eg=3.69 eV as observed in BM sputtering indicating that UBM sputtering results in good crystalline quality. Further, the C-V measurements of SnO2 thin films deposited using UBM at high power 250W show hysteresis with large flat band shift indicating that these thin films can be used for the fabrication of memory device. The observed results have been attributed to different mechanisms which exist simultaneously under unbalanced magnetron sputtering due to ion bombardment of growing SnO2 thin film by energetic Ar+ ions.

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