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Nobuyuki Koguchi 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Recent progress on the direct formation of GaAs/AlGaAs and InGaAs/GaAs QDs systems by droplet epitaxy are reviewed. The droplet epitaxy is promising for the fabrication of compound semiconductor quantum dots not only in a lattice-mismatched system but also in a lattice-matched system. By using this method, QDs samples without wetting layers are realized. We also review our recent progress toward the fabrication of site-controlled QDs by using droplet epitaxy on GaAs (001) with well-aligned nano-holes developed by combination of Atomic Force Microscopy (AFM) tip-induced oxidation and atomic hydrogen etching technique.en
이장명,노삼규,이주인,이동한,임재영,한일기,TakaakiMano,NobuyukiKoguchi 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.5
We have examined the effect of thermally induced interdiffusion on the photoluminescence (PL) emission of In0:5Ga0:5As quantum dots grown on GaAs substrates by using heterogeneous droplet epitaxy. Thermal intermixing was found to result in significant blue-shifts of the PL emission at annealing temperatures up to 800 C and in a decrease of the intersublevel (E01 = E1 - E0) by as much as 22.7 meV. In addition, the inhomogeneously broad linewidth of the PL spectra became more narrow with increasing annealing temperature. These results can be explained by the interdiffusion of In-Ga atoms, which changes the composition of the QDs, at the interface between the QDs and the GaAs barrier. We have examined the effect of thermally induced interdiffusion on the photoluminescence (PL) emission of In0:5Ga0:5As quantum dots grown on GaAs substrates by using heterogeneous droplet epitaxy. Thermal intermixing was found to result in significant blue-shifts of the PL emission at annealing temperatures up to 800 C and in a decrease of the intersublevel (E01 = E1 - E0) by as much as 22.7 meV. In addition, the inhomogeneously broad linewidth of the PL spectra became more narrow with increasing annealing temperature. These results can be explained by the interdiffusion of In-Ga atoms, which changes the composition of the QDs, at the interface between the QDs and the GaAs barrier.
Post-Growth Annealing Effects of In0.5Ga0.5As Quantum Dots Grown by Heterogeneous Droplet Epitaxy
ChangMyungLee,JooInLee,Jae-YoungLeem,Dong-HanLee,TakaakiMano,T.Tateno,NobuyukiKoguchi 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.1
Post-growth rapid thermal annealing modifies the structural and the optical properties of the In$_{0.5}$Ga$_{0.5}$As quantum dots grown on GaAs substrates by using heterogeneous droplet epitaxy. It is found that at annealing temperatures up to 750 $^\circ$C, a significant decrease in the intersublevel ($E_{01}=E_{1} - E_{0}$) from 55 to 23.7 meV occurs together with about a 62-meV blueshift. Also, we observe a decrease in the activation energy of about 200 meV. These results are explained by interdiffusion of In-Ga atoms at the interface between the QD and the GaAs barrier, which changes the composition of the QDs.