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RISS 인기검색어
- 검색키워드
- 저자 : Mai Linh (검색결과 58 건)
- 무료
- 기관 내 무료
- 유료
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Comparison of Resonance Characteristics in FBAR Devices by Thermal Treatments
Mai Linh,Song Hae-il,Yoon Giwan The Korea Institute of Information and Commucation 2005 Journal of information and communication convergen Vol.3 No.3
The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.
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Realization of FBAR Devices for Broadband WiMAX Applications
Mai, Linh,Lee, Jae-Young,Pham, Van Su,Yoon, Gi-Wan The Korea Institute of Information and Commucation 2008 Journal of information and communication convergen Vol.6 No.1
Effects of the addition of Cr adhesion layer to $W/SiO_2$ multilayer Bragg reflectors on the resonance characteristics of film bulk acoustic wave resonator (FBAR) devices are presented. Main resonance peaks could be significantly shifted to higher frequency, mainly due to the addition of Cr adhesion layer to multilayer Bragg reflectors and control of the bottom electrode thickness as well. The FBAR devices with the Cr adhesion layer in Bragg reflectors could result in much more improved resonance characteristics at about 3 GHz in terms of return loss and Q-factor.
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Mai, Linh,Song, Hae-Il,Tuan, Le Minh,Su, Pham Van,Yoon, Giwan Wiley Subscription Services, Inc., A Wiley Company 2005 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS - Vol.47 No.5
<P>This paper presents some methods to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done using sintering and/or annealing processes. The measurement shows a considerable improvement of return loss (S<SUB>11</SUB>) and quality factor (Q<SUB>s/p</SUB>). These thermal treatments seem very promising for enhancing the FBAR's resonance performance. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 459–462, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21199</P>
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Dependence of Resonance Characteristics on Thermal Annealing in ZnO-Based FBAR Devices
Mai Linh,Yim Mun-Hyuk,Yoon Gi-Wan,Kim Dong-Hyun The Korea Institute of Information and Commucation 2004 Journal of information and communication convergen Vol.2 No.3
In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.
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Effects of Thermal Treatment on the Characteristics of Spiral Inductors on Bragg Reflectors
Mai, Linh,Lee, Jae-Young,Le, Minh-Tuan,Pham, Van-Su,Yoon, Gi-Wan The Korea Institute of Information and Commucation 2006 Journal of information and communication convergen Vol.4 No.4
This paper presents the thermal technique to improve characteristic of planar spiral inductors. The spiral inductors were fabricated on silicon dioxide/silicon (SiO2/Si) wafer. The thermal treatment was done by annealing processes. The measure results showed a considerable improvement of return loss (Sl1). This thermal treatment seems very promising for enhancing spiral inductors based RF IC's.
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Spiral inductors fabricated on multi-layered Bragg reflector for Si-based RF IC applications
Mai, Linh,Song, Hae-il,Minh Tuan, Le,Van Su, Pham,Yoon, Giwan Wiley Subscription Services, Inc., A Wiley Company 2006 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Vol.48 No.7
<P>In this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S<SUB>11</SUB>-parameter. This approach seems highly feasible and promising for future Si-based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21621</P>
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A New Planar Spiral Inductor with Multi-layered Bragg Reflector for Si-Based RFIC's
Mai Linh,Lee Jae-Young,Le Minh-Tuan,Pham Van-Su,Yoon Gi-Wan The Korea Institute of Information and Commucation 2006 Journal of information and communication convergen Vol.4 No.2
In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the S11-parameter of the inductor.
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A Method to Improve Bragg Reflectors Quality in FBAR Devices
Mai, Linh,Lee, Jae-Young,Pham, Van Su,Yoon, Gi-Wan The Korea Institute of Information and Commucation 2007 Journal of information and communication convergen Vol.5 No.4
This paper presents some methods to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on multilayer Bragg reflectors (BR) into which very thin chromium (Cr) adhesion layers were inserted, followed by several kinds of thermal annealing processes. These methods resulted in an excellent device improvement in terms of return loss and Q-factors.
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Thin Film Bulk Acoustic Resonators for RF Applications
Linh, Mai,Lee, Jae-Young,Yoon, Gi-Wan The Korea Institute of Information and Commucation 2006 Journal of information and communication convergen Vol.4 No.3
A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.
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