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RISS 인기검색어
- 검색키워드
- 저자 : M. Isshiki (검색결과 8 건)
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Impurity Behavior in Cu Refined by Ar Plasma-Arc Zone Melting
G. M. Lalev,임재원,N. R. Munirathnam,G.-S. Choi,M. Uchikoshi,K. Mimura,M. Isshiki 대한금속·재료학회 2009 METALS AND MATERIALS International Vol.15 No.5
Purification of a 4N grade Cu rod by argon plasma-arc zone melting (APZM) was carried out. Detailed impurity analysis of the Cu rod was performed using glow discharge mass spectrometry (GDMS). Three impurity behavior groups based on segregation and evaporation during APZM were discussed using the GDMS analysis. Although the impurities with segregation coefficient ko < 1 were theoretically expected to be segregated towards the end of the Cu rod, it was found that the segregation effect by APZM can occur when the equilibrium distribution coefficient (ko) is less than 0.4 due to the strong affinity of Cu for some metallic and non-metallic impurities. On the other hand, the impurities for which ko > 1 had no significant reduction in their impurity concentrations. Some impurities, like Mg, S, Cd and Zn, were reduced much faster than the others in Cu. This was ascribed to the removal by zone refining coupled with the evaporation of impurities for Pimp/PCu > 102. Purification of a 4N grade Cu rod by argon plasma-arc zone melting (APZM) was carried out. Detailed impurity analysis of the Cu rod was performed using glow discharge mass spectrometry (GDMS). Three impurity behavior groups based on segregation and evaporation during APZM were discussed using the GDMS analysis. Although the impurities with segregation coefficient ko < 1 were theoretically expected to be segregated towards the end of the Cu rod, it was found that the segregation effect by APZM can occur when the equilibrium distribution coefficient (ko) is less than 0.4 due to the strong affinity of Cu for some metallic and non-metallic impurities. On the other hand, the impurities for which ko > 1 had no significant reduction in their impurity concentrations. Some impurities, like Mg, S, Cd and Zn, were reduced much faster than the others in Cu. This was ascribed to the removal by zone refining coupled with the evaporation of impurities for Pimp/PCu > 102.
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Lalev, G. M.,Lim, J.-W.,Munirathnam, N. R.,Choi, G.-S.,Uchikoshi, M.,Mimura, K.,Isshiki, M. The Japan Institute of Metals 2009 MATERIALS TRANSACTIONS Vol.50 No.3
<P>Removal of non-metallic impurities like O, N, C and S in 4N Cu rods by argon plasma-arc zone melting and hydrogen plasma-arc zone melting was investigated. The experimental results were discussed on the basis of thermodynamic estimation. Substantial removal of these impurities along the length of the Cu rods by argon plasma-arc zone melting was observed and relatively better removal by hydrogen plasma-arc zone melting was found to be due to activated hydrogen atoms. The removal of O, N, C and S was ascribed to the segregation effect as well as evaporation in the form of CH<SUB>4</SUB>, H<SUB>2</SUB>O and H<SUB>2</SUB>S. As a result, it was found that hydrogen plasma-arc zone melting is a better technique to eliminate non-metallic impurities like O, N, C and S in Cu.</P>
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Effect of annealing in N2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD
C.B.Oh,J.F.Wang,M.Isshiki 한국물리학회 2004 Current Applied Physics Vol.4 No.6
Annealing eect on net acceptor concentration in ZnSe:N is investigated. ZnSe:N homo-epitaxial layer was grown at 823 K byMOCVD using ammonia (NH 3) as a dopant source. Photoluminescence (PL) spectra measured on as-grown layer exhibited thestrong deep donoracceptor pair (DdAP) emission and the weak IN1 emission line. In order to enhance the activation of nitrogen inZnSe epitaxial layer, sample was annealed at the 823 K in nitrogen (N2) and hydrogen (H2) atmosphere. Only the annealing innitrogen atmosphere increased IN1 emission intensity indicate the activation of nitrogen acceptor. And net acceptor concentrationwas estimated to be 3· 1017cm. 3 by CV measurements. This activation mechanism is interpreted as hydrogen is released from NHbonds during annealing in nitrogen atmosphere.
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Characterization of Microstructure and Mechanical Properties of High-Purity Iron Added with Copper
( O Taguchi ),( Su Yeon Lee ),( M Uchikoshi ),( M Isshiki ),( Chan Gyu Lee ),( S Suzuki ),( Vladimir S Gornakov ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.1
An influence of the addition of copper (0.5, 1.0 and 1.5 mass% Cu) on the microstructure and mechanical properties of high purity iron (99.998 mass%) was characterized. The microstructure and microhardness of high-purity iron based samples, which were rolled at room temperature and subsequently annealed, were investigated in this work. The microstructure of the samples has been observed by electron back scattering diffraction (EBSD) and the mechanical properties have been studied by using micro-Vickers hardness test. The results of microstructural observation showed that deformation band was formed in high purity iron by rolling at room temperature, and it was recovered by annealing up to about 900 K. The microhardness results showed that the softening of high-purity iron occurred by annealing up to about 900 K, while the hardness of iron added with about 0.5-1.5 mass% copper was kept over 100 Hv and at the early time of annealing reached a maximum. The hardness of iron added with a small amount of copper may be attributed to precipitation hardening as well as solution hardening. The orientation of crystal in recrystallized grain was almost same as that of deformed grain. (Received November 21, 2011; Revised December 28, 2011; Accepted January 19, 2012)
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p-type characteristics of ZnSe:Li₃N grown by a closed Bridgman method
J.F. Wang,T. Miyano,M. Isshiki 한국물리학회 2008 Current Applied Physics Vol.8 No.5
We intend to search a new method to prepare high-quality and large-size p-ZnSe single crystal. In this study, ZnSe:Li₃N single crystal is grown by a vertical Bridgman method using a closed double-crucible. The photoluminescence (PL) spectrum of the as-grown ZnSe:- Li₃N crystal at 8 K shows very strong donor–acceptor pair (DAP) and very weak exciton emissions. In order to activate doped Li₃N, ZnSe:Li₃N single crystal is annealed at high temperature in Zn-saturated atmosphere. By selecting suitable annealing conditions, a very strong I1 emission line related to shallow acceptor is observed. The capacitance–voltage (C–V) characteristics indicate that the annealed ZnSe:Li₃N single crystal is a p-type conduction. Furthermore, the acceptor concentration and ionization energy are estimated by examining the temperature dependences of the free-to-acceptor (FA) emission, the behaviors of Li and N are investigated, and the new emission at 2.34 eV is discussed. We intend to search a new method to prepare high-quality and large-size p-ZnSe single crystal. In this study, ZnSe:Li₃N single crystal is grown by a vertical Bridgman method using a closed double-crucible. The photoluminescence (PL) spectrum of the as-grown ZnSe:- Li₃N crystal at 8 K shows very strong donor–acceptor pair (DAP) and very weak exciton emissions. In order to activate doped Li₃N, ZnSe:Li₃N single crystal is annealed at high temperature in Zn-saturated atmosphere. By selecting suitable annealing conditions, a very strong I1 emission line related to shallow acceptor is observed. The capacitance–voltage (C–V) characteristics indicate that the annealed ZnSe:Li₃N single crystal is a p-type conduction. Furthermore, the acceptor concentration and ionization energy are estimated by examining the temperature dependences of the free-to-acceptor (FA) emission, the behaviors of Li and N are investigated, and the new emission at 2.34 eV is discussed.
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Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO2
J.-W. Lim,W. Takayama,Y.F. Zhu,J.W. Bae,J.F. Wang,S.Y. Ji,K. Mimura,J.H. Yoo,M. Isshiki 한국물리학회 2007 Current Applied Physics Vol.7 No.3
We report a visible luminescence of Er3+ ions in an amorphous-nanocrystalline AlN:Er thin lm prepared by co-deposition usingAlN, Er, and SiO2 3+ in the AlN:Er lm annealed at 750.C showed a strong bluish green emissionof Er3+ in the amorphous-nanocrystalline AlN:Er thin lm, which is attributed to the intra-4fEr3+ transitions of2H11/2!4I15/2 and4F7/2!4I15/2The occurrence of the strong Er3+ emission in the annealed AlN:Er thin lm with a mixture of amorphous and nanocrystalline phasesmay be contributed to an increase in the number of excitation Er3+ centers and a presence of oxygen related to Er3+ excitation andrecombination process in the AlN:Er thin film.
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