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Crystallization by Green-laser Annealing for Three-dimensional Device Application
Yumi Kawamura,Koji Yamasaki,Takehiko Yamashita,Yuta Sugawara,Yukiharu Uraoka,Mutsumi Kimura 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.5
We report the crystallization of multilayer polycrystalline Si (poly-Si) thin films by green laser annealing with potential applications to three-dimensional devices. We investigated single-, doubleand triple-layer poly-Si thin films crystallized by GLA. The crystallinity of the green-laser-annealed (GLA) poly-Si films was improved by employing a multilayer structure; larger crystal grains were obtained at a lower power than the case of a single layer. We applied the GLA multilayer poly-Si thin films to the fabrication of thin film transistors (TFTs) and thin-film photodiodes. Through a comparison of their performance, we demonstrated the superiority of multilayer crystallization.
Yukihary Uraoka,Koji Yamasaki,Masahiro Ochi,Ichiro Yamashita,Yuta Sugawara 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.3
We proposed the fabrication method for high quality polycrystalline silicon thin films by using the Ni core of ferritin with a diameter of 7 nm. Amorphous silicon thin films with Ni cores of ferritin were crystallized by using a pulsed rapid thermal annealing (PRTA) method to short the crystallization time. Lateral growth with increasing pulse numbers was confirmed. In order to analyze the crystallinity of the film, we performed electron backscatter diffraction pattern (EBSD)and Raman analysis. A poly-Si thin film with an average crystal grain size of 5.4 µm was obtained for a low-density Ni core in less than a minute. The crystallinity of the poly-Si with a Ni core fabricated by using PRTA was almost the same as that of poly-Si with a Ni core that required 24h to fabricate. This method is promising for a low-cost fabrication of high-performance thin film transistors.