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Preparation of copper nanoparticles with an organic coating by a pulsed wire discharge method
K. Murai,Y. Watanabe,Y. Saito,T. Nakayama,H. Suematsu,W. Jiang,K. Yatsui,심광보,코이치니하라 한양대학교 세라믹연구소 2007 Journal of Ceramic Processing Research Vol.8 No.2
In the pulsed wire discharge method, a coating technique to prepare metal nanoparticles covered with organic matter has been investigated. Copper nanoparticles covered with organic matter have been successfully prepared by evaporation of a copper wire in an oleic acid vapor/mist. The thickness of the coating layer was a few nanometres. The median diameter of the powder was 25 nm, and became 10 nm smaller than that without the coating because of the inhibition of particle growth by the formation of the coating. From phase identification by transmission electron microscopy and X-ray diffraction analysis, it was found that the copper nanoparticles have been passivated and have not been oxidized in over 2 months. In the pulsed wire discharge method, a coating technique to prepare metal nanoparticles covered with organic matter has been investigated. Copper nanoparticles covered with organic matter have been successfully prepared by evaporation of a copper wire in an oleic acid vapor/mist. The thickness of the coating layer was a few nanometres. The median diameter of the powder was 25 nm, and became 10 nm smaller than that without the coating because of the inhibition of particle growth by the formation of the coating. From phase identification by transmission electron microscopy and X-ray diffraction analysis, it was found that the copper nanoparticles have been passivated and have not been oxidized in over 2 months.
Yatsui, T,Lim, J,Nakamata, T,Kitamura, K,Ohtsu, M,Yi, G-C IOP Pub 2007 Nanotechnology Vol.18 No.6
<P>We successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 °C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems.</P>
Weihua Jiang,Nakahiro, K.,Yatsui, K.,Jong-Hyun Kim,Shimizu, N. IEEE 2007 IEEE transactions on dielectrics and electrical in Vol.14 No.4
<P>A compact pulsed high-voltage generator has been developed for applications in pulsed gas discharges. Its operation principle is based on inductive energy storage and it uses a static induction thyristor as the opening switch. It is capable of generating pulsed high voltage of ~15 kV with pulse width of ~200 ns for load resistance of 1 kOmega. This generator can be operated at repetition rate as high as 50 kHz if it is driven directly by 200 V power supply and is cooled by transformer oil. It can also be driven by a 12 V car battery through a chopper circuit, while operating at repetition rate of 2 kHz. In this case, an overall energy efficiency of ~40 % has been obtained.</P>