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- 저자 : Jong-MoonPark (검색결과 2 건)
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Modeling a Via Profile Etched in a CHF3/CF4 Plasma Using a Neural Network
ByungwhanKim,권광호,Sung-KuKwon,Jong-MoonPark,Seong-WookYoo,Kun-SikPark,In-KyuYou,Bo-WooKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
Via profiles of oxide films were qualitatively modeled using a neural network. The oxide films were magnetically etched in a CHF$_3$/CF$_4$ plasma with various radio-frequency (RF) powers, pressures, and CHF$_3$ and CF$_4$ flow rates. A statistical 2$^{4-1}$ fractional factorial experiment was conducted to characterize the behavior of the via profile. The neural network was trained on nine experiments, and the trained model was evaluated on another eight experiments, not belonging to the training data. As a function of the training factors, the prediction accuracy of profile model was optimized, and the optimized model had a prediction error of 3.05$^\circ$. Compared to the statistical regression model, this was about a 43 \% improvement in the prediction accuracy. Using the model, we made several 3-D plots to unveil underlying etch mechanisms, including the factor interaction effects, involved in via formation. As expected, the profile angle decreased with increasing RF power without regard to the pressure. The DC bias induced by the pressure played an important role in affecting the profile angle. The profile became more positively sloped with increasing the CHF$_3$ flow rate, contrary to what was noticed with the variation in the CF$_4$ flow rate. For the profiles to be positively sloped, the effects of either pressure or CHF$_3$ flow rate must be more noticeable than they are for the profiles to be negatively sloped.
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High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications
Sang-Gi Kim,Jong-Il Won,Jin Gun Koo,YilSukYang,Jong-MoonPark,Hoon-Soo Park,SanghoonChai 한국전기전자재료학회 2016 Transactions on Electrical and Electronic Material Vol.17 No.5
In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductorfield-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order torealize higher cell density, higher current driving capability, cost-effective production, and higher reliability, selfalignedtrench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltageand simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trenchgate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistanceand breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio wasapproximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.
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