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Kyoung-TaeKim,Chang-IlKim,강동희,Il-WunShim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
Bi3:25La0:75Ti3O12 (BLT) thin lms with a polycrystalline structure were deposited onto Pt/Ti/SiO2/Si substrate by using a metalorganic decomposition method (MOD). The layered perovskite structure was investigated using annealing for 1 h in the temperature range from 550750 C. The structural properties of the BLT lms were characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Field emission scanning electron microscopy (FESEM) showed uniform surfaces composed of rod-like grains without cracks and pin-holes. The grain size of the BLT films increased with increasing annealing temperature. The hysteresis loops of the films were well defined at temperatures above 600 C. The BLT lm annealed at 650 C exhibited a dielectric constant of 279, a dielectric loss of 1.85 %, a remanent (2Pr) polarization of 25.66 C/cm2, and a coercive eld (Ec) of 84.75 kV/cm. The BLT thin lms showed good fatigue endurance up to 3.5109 bipolar cycling at 5 V and 50 kHz.