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Comparison of TiN and TiAlN as a Di usion Barrier Deposited by Atomic Layer Deposition
Hyeongtag JEON 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
We deposited the TiN and the TiAlN lms by using the atomic layer deposition (ALD) method with tetrakis-ethylmethyl-amido-titanium (TDMAT) as the Ti precursor, dimethylaluminumhydride- ethylpiperidine (DMAH-EPP) as the Al precursor, and NH3 as the reactant gas. The composition of the TiN lm exhibited stoichiometric TiN, which was almost 1:1 of Ti:N. However, the Ti to Al ratio in the TiAlN lm was less than unity. The carbon impurity content in the TiN and the TiAlN lms deposited at 200 C was below 5 at.%. The growth rates of the TiN and the TiAlN lms obtained with this ALD system were about 0.8 and 1.25 A per cycle. In case of the TiN lms, etch pits started to appear when the sample was annealed at 500 C while in the TiAlN lm they started to appear at 700 C.
Resistive switching behaviors of Ti nano-layer embedded TaO<sub>x</sub>-based devices
Jeon, Heeyoung,Park, Jingyu,Jang, Woochool,Kim, Hyunjung,Lee, Kunyoung,Shin, Changhee,Lee, Jaemin,Jeon, Hyeongtag ELSEVIER 2017 CURRENT APPLIED PHYSICS Vol.17 No.2
<P>The role of a Ti nano-layer embedded in TaOx-based devices operating with conductive filaments consisting of oxygen vacancies was investigated. The Ti nano-layer was embedded in three different positions: the top interface (Au/TaOx), bottom interface (TaOx/TiN), and both interfaces. The embedded Ti nano-layer serves as not only an oxygen reservoir but also a tunneling barrier in the case of the top interface. The position of the Ti nano-layer and its thickness play important roles in the resistive switching behaviors. In addition, the effect of the current compliance on the resistive switching behaviors was evaluated. The different resistive switching behaviors were investigated using current voltage sweep measurements and X-ray photoelectron spectroscopy. The non-linear behavior of the low resistance state could be controlled by the top interface and current compliance. The current of the high resistance state could be controlled by the bottom interface. It is noteworthy that only 1.5-nm-thick Ti nano-layer can adjust the non-linear behavior of the low resistance state at top interface and the current of the high resistance state at bottom interface. (C) 2016 Elsevier B.V. All rights reserved.</P>
Jung, Hyunsoo,Jeon, Heeyoung,Choi, Hagyoung,Ham, Giyul,Shin, Seokyoon,Jeon, Hyeongtag American Institute of Physics 2014 JOURNAL OF APPLIED PHYSICS - Vol.115 No.7
<P>Al2O3 films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al2O3 layers with different densities are deposited with different deposition conditions of O-2 plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 x 10(-5) gm(-2) day(-1), which is one order of magnitude less than WVTR for the reference single-density Al2O3 layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O-2 and H2O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H2O and O-2 between the two layers. (C) 2014 AIP Publishing LLC.</P>
Song, Hyoseok,Jeon, Heeyoung,Shin, Changhee,Shin, Seokyoon,Jang, Woochool,Park, Joohyun,Chang, Jaewan,Choi, Jae Hyoung,Kim, Younsoo,Lim, HanJin,Seo, Hyungtak,Jeon, Hyeongtag Elsevier S.A. 2016 Thin Solid Films Vol.619 No.-
<P><B>Abstract</B></P> <P>In this study, we report the effect of process conditions on the crystallinity and energy band structure of atomic layer deposition (ALD) ZrO<SUB>2</SUB> films deposited, using tris(dimethylamino) cyclopentadienyl zirconium as a precursor and ozone as a reactant. ZrO<SUB>2</SUB> films exhibited systematic changes in phase and energy band gap as a function of the ozone concentration. The crystal phase was transformed from the monoclinic phase to a tetragonal phase in the presence of higher ozone concentrations. In addition, spectroscopic ellipsometry measurements showed that the optical band gap and oxygen vacancy defects decreased with increasing ozone concentration. The valence band maximum also shifted closer to the Fermi energy level with increasing ozone concentration. The change in electronic structure driven by a high concentration of ozone led to reduced leakage current density and a high dielectric constant in the ZrO<SUB>2</SUB>-based metal-insulator-metal capacitors. These improvements were not observed for depositions performed using conventional ZrO<SUB>2</SUB> ALD with oxygen and water reactants.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We report the effect of ozone concentration on the properties of ZrO<SUB>2</SUB> thin films. </LI> <LI> The ZrO<SUB>2</SUB> at higher O<SUB>3</SUB> transformed from a monoclinic phase to a tetragonal phase. </LI> <LI> The ZrO<SUB>2</SUB> at higher O<SUB>3</SUB> concentration showed the reduced leakage current. </LI> <LI> The ZrO<SUB>2</SUB> at higher O<SUB>3</SUB> concentration showed the higher dielectric constant. </LI> </UL> </P>
Investigation of the flatband voltage (V(FB)) shift of Al2O3 on N2 plasma treated Si substrate.
Kim, Hyungchul,Lee, Jaesang,Jeon, Heeyoung,Park, Jingyu,Jeon, Hyeongtag American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>The relationships between the physical and electrical characteristics of films treated with N2 plasma followed by forming gas annealing (FGA) were investigated. The Si substrates were treated with various radio frequency (RF) power levels under a N2 ambient. Al2O3 films were then deposited on Si substrates via remote plasma atomic-layer deposition. The plasma characteristics, such as the radical and ion density, were investigated using optical emission spectroscopy. Through X-ray photoelectron spectroscopy, the chemical-bonding configurations of the samples treated with N2 plasma and FGA were examined. The quantity of Si-N bonds increased as the RF power was increased, and Si--O--N bonds were generated after FGA. The flatband voltage (VFB) was shifted in the negative direction with increasing RF power, but the VFB values of the samples after FGA shifted in the positive direction due to the formation of Si--O--N bonds. N2 plasma treatment with various RF power levels slightly increased the leakage current due to the generation of defect sites.</P>