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RISS 인기검색어
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- 저자 : H. Tecimer (검색결과 2 건)
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H.G. Çetinkaya,H. Tecimer,H. Uslu,S. Altındal 한국물리학회 2013 Current Applied Physics Vol.13 No.6
The charge conduction properties of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) were investigated using currentevoltageetemperature (IeVeT) measurements in dark and under various illumination levels. For this purpose, the main diode parameters such as reverse-saturation current (Io),zero-bias barrier height (FBo), ideality factor (n), series resistance (Rs) and shunt resistance (Rsh) of diode were obtained as function of temperature and illumination level. Experimental results show that all of these electrical parameters are strong functions of illumination and temperature. The change in all electrical parameters becomes more important at low temperatures and illumination levels. While the n value decreases with increasing temperature and illumination level, FBo value increases. The fill factor (FF = Vm·Im/Voc·Isc) values were obtained as 0.34 at 80 K and 0.40 at 320 K under 50 Wand these values are near to a photodiode. Therefore, the fabricated diode can be used as a photodiode in optoelectronic applications. The forward bias IeV characteristics of the diode have also been explained by the space charge limited current (SCLC) model.
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A. Kaya,Ö. Vural,H. Tecimer,S. Demirezen,S¸ . Altındal 한국물리학회 2014 Current Applied Physics Vol.14 No.3
Au/PVC þ TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant ( 3 0 , 3 00), loss tangent (tand), and the real and imaginary parts of the electric modulus (M0 , M00) and ac conductivity (sac) of this structure have been investigated in wide frequency a range of 1 kHze5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (Nss). The decrease in 3 0 and 3 00 with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M0 increase with increasing frequency and reach a maximum, M00 shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(sac) vs ln(u) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(sac) vs ln(u) plot indicated that there are three different conduction mechanisms in the Au/PVC þ TCNQ/p-Si structure at room temperature.
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