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Luminescence from ZnO/MgO nanoparticle structures prepared by solution techniques
G.N.Panin,A.N.Baranov,오영제,강태원 한국물리학회 2004 Current Applied Physics Vol.4 No.6
The optical and structural properties of mixed ZnO/MgO particles prepared by solution techniques are investigated by thecathodoluminescence and electron microscopy techniques. The samples annealed at 4001000.C show well crystalline wurtzitestructure of the ZnO (MgZnO) particles with the size in range of 10100 nm. Annealing at high temperatures (>700.C) leads to Mgdiusion in ZnO and MgxZn1. xO alloy formation. The blue shifts of the near-band-edge emission as a result of the alloy band gapwidening and quantum connement eect for the small size particles are demonstrated.
Self-Assembled GaN Quantum Dots in GaN/AlxGa1-xN Structures Grown by PAMBE
G. Panin,강왕,M. Bao,김태환,강태원,박영신 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
High-resolution scanning electron microscopy (HRSEM), cathodoluminescence (CL) and electron beam induced current (EBIC) techniques were used to investigate the structural, optical and electrical properties of GaN/AlxGa1
Spatially Resolved Study of Luminescent and Electrical Properties of ZnO/GaAs Structures
G. N. Panin,M. S. Jang,강태원 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
High-resolution scanning electron microscopy (HRSEM) and cathodoluminescence (CL) spectroscopy measurements were performed to study of ZnO/GaAs structures fabricated by sputtering of ZnO films on a GaAs substrate. Self-doping effect of the structures as a result of the post-growth annealing is investigated. The annealed ZnO films show the well-oriented columnar structure and strong exciton emission at room temperature. Out-diffusion of gallium and arsenic from substrate into a ZnO film has been found to result in the different dopant contrast, measured by a through-the lens secondary electron (TTLSE) technique. Extended structural defects in ZnO assist Ga out-diffusion and show an enhanced electron conductivity after annealing, while As self-doped ZnO region with 120 nm width adjacent to the ZnO/GaAs interface indicates p-type conductivity and the enhanced luminescence associated with donor-acceptor pairs and exciton bound to acceptors.
GaN Pyramids Prepared by Photo-Assisted Chemical Etching
강태원,데준푸,G. P. Panin 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
GaN pyramids were formed by photo-assisted chemical etching of GaN epilayers grown by molecular-beam epitaxy. The etching was conducted by using a solution of KOH and K$_2$S$_2$O$_8$ under ultraviolet illumination. The pyramids are hexagonal, submicron in size, and nonuniformly distributed on the substrate. Energy-dispersive X-ray analysis revealed a Ga-oxide layer covering the pyramids. This oxide can be removed by boiling in concentrated KOH. Cathodoluminescence measured from the pyramids was redshifted with respect to the GaN epilayer. The main reason for the redshift is the field induced by the electric polarization of the pyramid structure.
Resistive switching in graphene/graphene oxide/ZnO heterostructures
Kapitanova, O. O.,Panin, G. N.,Kononenko, O. V.,Baranov, A. N.,Kang, T. W. 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.
Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigated using optical and electrical characterizations. ZnO nanorods grown on graphene substrate by using the hydrothermal method were used for local oxidation of graphene and the formation of self-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed by thermal reduction or the growth of graphene by using chemical vapor deposition. The vertical heterostructure demonstrated well-reproducible resistive switching for low offset voltage and could be used to fabricate high-density memory devices with low power consumption.
Tunable UV-visible absorption of SnS2layered quantum dots produced by liquid phase exfoliation
Fu, Xiao,Ilanchezhiyan, P.,Mohan Kumar, G.,Cho, Hak Dong,Zhang, Lei,Chan, A. Sattar,Lee, Dong J.,Panin, Gennady N.,Kang, Tae Won The Royal Society of Chemistry 2017 Nanoscale Vol.9 No.5
<P>4H-SnS2 layered crystals synthesized by a hydrothermal method were used to obtain via liquid phase exfoliation quantum dots (QDs), consisting of a single layer (SLQDs) or multiple layers (MLQDs). Systematic downshift of the peaks in the Raman spectra of crystals with a decrease in size was observed. The bandgap of layered QDs, estimated by UV-visible absorption spectroscopy and the tunneling current measurements using graphene probes, increases from 2.25 eV to 3.50 eV with decreasing size. 2-4 nm SLQDs, which are transparent in the visible region, show selective absorption and photosensitivity at wavelengths in the ultraviolet region of the spectrum while larger MLQDs (5-90 nm) exhibit a broad band absorption in the visible spectral region and the photoresponse under white light. The results show that the layered quantum dots obtained by liquid phase exfoliation exhibit wellcontrolled and regulated bandgap absorption in a wide tunable wavelength range. These novel layered quantum dots prepared using an inexpensive method of exfoliation and deposition from solution onto various substrates at room temperature can be used to create highly efficient visible-blind ultraviolet photodetectors and multiple bandgap solar cells.</P>