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RISS 인기검색어
- 검색키워드
- 저자 : Eui-GooChang (검색결과 3 건)
- 무료
- 기관 내 무료
- 유료
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Effect of CF4 Addition to Cl2/Ar on the Etching of Ferroelectric YMnO3
Jae-HwaPark,Kyoung-TaeKim,Chang-IlKim,Eui-GooChang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
The etching behaviors of ferroelectric YMnO$_3$ thin films in an inductively coupled plasma (ICP) were investigated in terms of the etch rate, the selectivity, and the etch profiles. The maximum etch rate of YMnO$_3$ thin films was 300 \AA/min for no CF$_4$ add to the Cl$_2$/Ar gas plasma, an RF power of 800 W, a dc bias voltage of $-$200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 $^\circ$C. The selectivities of YMnO$_3$ for SiO$_2$ and Pt were 0.5 and 0.3, respectively. The etch profile of the YMnO$_3$ film etched in a CF$_4$/Cl$_2$/Ar plasma was about 80$^\circ$. The result of optical emission spectroscopy (OES) showed that the addition of CF$_4$ gas to the Cl$_2$/Ar plasma increased the number of Cl radicals. However, the added CF$_4$ decreased the etch rate of the YMnO$_3$ thin films. X-ray photoelectron spectroscopy (XPS) showed that the YF$_x$ compounds observed on the surface of the YMnO$_3$ thin films etched in a CF$_4$/Cl$_2$/Ar plasma acted as a surface passivant that reduced the chemical reactions between Y, Mn, and Cl.
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A Study on the Corrosion Effects by Addition Complexing Agent in the Copper CMP Process
Sang-YongKim,Nam-HoonKim,In-PyoKim,Eui-GooChang,Yong-JinSeo,Hun-SangChung 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.6
Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H2O2 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.
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Roles of Phosphoric Acid in Slurry for Cu and TaN CMP
Sang-YongKim,Jong-HeunLim,Chong-HeeYu,Nam-HoonKim,Eui-GooChang 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.2
The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H2O2) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H3PO4) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2nd step copper CMP slurry and hydrogen peroxide stability.
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