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RISS 인기검색어
- 검색키워드
- 저자 : Dong-PyoKim (검색결과 5 건)
- 무료
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Etching Characteristics of SrBi2Ta2O9 Thin Films in a Cl2/CF4/Ar Plasma
Dong-PyoKim,Chang-IlKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
The etching characteristics of SrBi2Ta2O9 (SBT) thin lms deposited by metal-organic decomposition were investigated using a Cl2/CF4/Ar inductively coupled plasma. The etch rate of the SBT thin lms increased with up to a 20 % addition of Cl2 into the CF4/Ar plasma. The etching rate increase during Cl2 addition may be connected with the higher volatility of metal chlorides in comparison with the volatilies of the uoride-containing etching products. The etch prole of SBT thin lms for a Cl2(20 %)/CF4(20 %)/Ar plasma, which corresponded to a maximum etching rate, was over 80. The changes in the chemical states on the etched surface of the SBT films were detected by using X-ray photoelectron spectroscopy. The etch prole and the roughness were investigated by using scanning electron microscopy. The remnant polarization of SBT was decreased after etching under a Cl2(20 %)/CF4(20 %)/Ar plasma and recovered after annealing in an O2 ambient.
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Characteristics of CeO2 Thin Films Etched with a High-Density CF4/Ar Plasma
Dong-PyoKim,Chang-IlKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
Cerium dioxide (CeO$_2$) was used as an intermediate layer for a metal-ferroelectric-semiconductor field-effect transistor to improve the interface property by preventing the interdiffusion of the ferroelectric material into the Si substrate. CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in an inductively coupled plasma (ICP). The maximum etch rate of the CeO$_2$ thin films was 270 {\AA}/min for CF$_4$(20 \%)/Ar at 600 W/$-$200 V, 15 mTorr, and 25 $^\circ$C. The selectivities of CeO$_2$ to the photoresist and SrBi$_2$Ta$_2$O$_9$ were 0.21 and 0.25, respectively. The surface reaction of the etched CeO$_2$ was investigated with X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS). Ce reacts with F radicals and forms Ce-F bonds, which remain on the surface of the CeO$_2$. Those products can be removed by Ar-ion bombardment sputtering. The etch slope of CeO$_2$ with the 0.5-$\mu$m line pattern was about 65$^\circ$C.
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Etching Characteristics of Au Thin Films using Inductively Coupled Cf4/Cl2/Ar Plasma
Dong-PyoKim,Chang-IlKim 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.3
The etching of Au thin films has been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties including etch rate and selectivity were examined as CF4 content adds from 0 to 30 % to Cl2/Ar plasma. The Cl2/(Cl2 + Ar) gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of –150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30℃. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/Ar gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Au peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.
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Etching Characteristics of YMnO3 Thin Films in Cl Based Industively Coupled Plasma
Dong-PyoKim,Chang-IlKim 한국전기전자재료학회 2003 Transactions on Electrical and Electronic Material Vol.4 No.2
Ferroelectric YMnO3 thin films were etched with Ar/Cl2 and CF4/Cl2 plasma. The maximum etch rate of YMnO3 thin film was 300 Å/min at a Cl2/Ar gas mixing ratio of 8/2, an RF power of 800 W, a dc bias of –200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 ºC. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium was not only etched by chemical reactions with Cl atoms, but also assisted by Ar ion bombardments in Ar/Cl2 plasma. In CF4/Cl2 plasma, yttrium formed nonvolatile YFx compounds and remained on and the etched surface of YMnO3. Manganese etched effectively by forming volatile MnClx and MnFy. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO3 thin film etched in Ar/Cl2 plasma shows lower than that in CF4/Cl2 plasma. It indicates that the crystallinty of the YMnO3 thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.
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A.M.Efremov,Dong-PyoKim,Chang-IlKim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.6
In this work, we carried out an investigation of the in uence of the Cl2/CF4 mixing ratio on both the plasma parameters and the volume densities of the neutral and the charged particles in an inductively coupled plasma system. The shift in the gas mixture content from pure Cl2 to CF4 was found to lead decrease in the electron and the ion densities but to an increase in the electron temperature. Although a stepwise dissociation did not contribute to the formation of Cl and F atoms, a change in the gas mixing ratio in uenced electron-impact dissociation and recombination kinetics. As a result, in a Cl2-rich plasma, a non-monotonic behavior of the Cl atom density is possible.
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