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      • KCI등재

        Intensity of Optical Absorption Close to the Band Edge in Strained ZnO Films

        Daniel FRITSCH,Heidemarie Schmidt,Rudiger SCHMIDT-GRUND,Marius GRUNDMANN 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

        Besides other one of the remarkable properties making wurtzite ZnO such an interesting material is its large exciton binding energy of about 60 meV, leading to stable excitons atrom-temperature. Also, the Curie temperature of this wide-gap material has ben predicted to lie above rom tem- perature, making ZnO aloyed with magnetic ions a posible material for spintronics applications. One big chalenge in the fabrication of ZnO-based heterostructure devices is the latice mismatch betwentheZnO films and the substrates and the different thermal expansion coeffcients inducing biaxial strain. This work reports on the electronic band structure of biaxialy strained ZnO for strains along the a-or the c-axis ranging from -1 % to 1 %, as calculated by means of the empirical pseudopotential method. thereby, we also acount for relativistic eects in the form of the spin- orbit interaction, as wel as for the energy dependence of the crystal potential through the use of nonlocal model potentials. Moreover, the application of a variable plane wave basis set alows us to directly obtain the strain-induced variations of the electronic and the optical properties of wurtzite ZnO.

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        Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO

        Rudiger Schmidt-Grund,Bernd Rheinlander,Evgeni M. Kaidashev,Michael Lorenz,Marius Grundmann,Daniel Fritsch,Mathias M. Schubert,Heidemarie Schmidt,Craig M. Herzinger 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

        For ZnO, the optical dielectric functions for polarizations parallel and perpendicular to the optical axis were determined in the photon energy range from 4.0 to 9.5 eV by using generalized spectroscopic ellipsometry and the band structure was calculated by means of the empirical pseudopotential method. From the band structure, a theoretical dielectric function was derived. The dielectric functions reveal features that were identied as band-to-band transitions. The energies of those transitions were assigned to band-to-band transition energies of critical points of the calculated band structure. For ZnO, the optical dielectric functions for polarizations parallel and perpendicular to the optical axis were determined in the photon energy range from 4.0 to 9.5 eV by using generalized spectroscopic ellipsometry and the band structure was calculated by means of the empirical pseudopotential method. From the band structure, a theoretical dielectric function was derived. The dielectric functions reveal features that were identied as band-to-band transitions. The energies of those transitions were assigned to band-to-band transition energies of critical points of the calculated band structure.

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