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Min-ChulKim,Ji-WonChoi,Chong-YunKang,Seok-JinYoon,Hyun-JaiKim,KiHyunYoon 한국전기전자재료학회 2002 Transactions on Electrical and Electronic Material Vol.3 No.1
The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZr0.52Ti0.48O3 (PZT) thin films prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400∼600℃) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 550℃ without post annealing and the PZT films deposited below 500℃ formed the single phase with post annealing at 650℃. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 550℃. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 550℃ and annealed at 650℃ were 34.3 μC/cm2 and 60.2 kV/cm, respectively.