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2 CASES OF RABBIT SYNDROME : 토끼증후군 2례
민병근,이창화,안준호,천두욱,김헌수 울산대학교 의과대학 1994 울산의대학술지 Vol.3 No.2
The application of neuroleptics to schizophrenic and other psychotic patients in the early 1950's led to the therapeutic revolution into the psychiatry, on the other hand neuroleptic-related adverse effects did frequently occur. The authors experienced 2 cases of rabbit syndrome producing by rare complication of neuroleptic medication. Two cases were examined for the rabbit syndrome by the description of Villeneuve(1972) and Sovner and DiMascio(1977). The reciprocal coordination test and the finger-tapping technique to worsen the symptoms also were applied to two patients. The authors emphasized two issues of rabbit syndrome as follows. First, though the literature search showed that the majority of patients presented with rabbit syndrome which is usually seen after a prolonged exposure to neuroleptic medication with the more potency in the middle or elderly aged are over 45 years old, we suggest that this syndrome might be linked to the younger age factor and the low potency thioridazine in our patient. Second, the rabbit syndrome is in the importance of the clinical practice because of being readily reversible with antiparkinsonian agents or anticholinergic drugs. In addition, recognizing this condition and differentiating it from tardive dyskinesia helps in the choice of the proper treatment of orofacial disorders following neuroleptic medication for the long time.
함정오,안규동,황규윤,이병국,이성수,정두신 가톨릭대학산업의학센타 산업의학연구소 1992 韓國의 産業醫學 Vol.31 No.3
To investigate the effect of environmental measurement on the improvement of working condition in small and medium sized industries and to evaluate the usefulness of this measurement which is covered by Occupational Safety and Health Act for the protection of workers from hazardous working condition, authors selected 107 small and medium sized manufacturing industries mainly from Chunan area and partly from lead using industries which were in special contract of agent specific occupational health service with Institute of Industrial Medicine, Soonchunhyang University. Environmental measurements were provided twice in interval of 6 months to study industries. At the end of second measurement questionnaires were collected to check the usefulness of this measurement for the workers and industries itself. The results obtained were as follows: 1. Out of 107 manufacturing industries, the most frequently measured index of harmful agent in environmental measurement was noise, and the next indices were dust, organic solvents and special chemicals in descending order. While the excess rates of measurement over Permissible Exposure Level(PEL) in the first measurement were 19.3% in noise, 22.8% in dust, 14.3% I organic solvents and 20.3% in special chemicals measurement, those in second measurement were 26.0% in noise, 14.7% in dust, 10.0% in organic solvents and 29.5% in special chemicals measurement, respectively. 2. The supply rate of protective equipment and the labeling condition of health and safety poster in the later period of study were improved than early period. 3. Most persons in charge of health and safety management(97.2%) had engaged in other administrative works and only 2.8% of study industries had independent occupational safety and health personnels who engaged only in health and safety of workers. 4. The purpose of environmental measurement answered by the eligible of persons each industries was to report at the regional office of labor affair. Only 7 out of 107 industries answered that their measurements were for the real improvement of working condition and 3 industries for the fulfilment of requirement of trade union. 5. While 86.0% in industries (92/107) felt the report of environmental measurement was helpful to set up protective equipment program to prevent workers from harmful condition, 66.4% in industries answered that it was useful for the establishment of health education program. The measurement of environmental conditions were also useful for the installation of ventilatory system of workplace, for the isolation of work process and for the improvement of work process. But 8.4% in industries answered that it was not useful at all.
김창훈,김엄기,전용두,이금배,남승훈,안병욱 한밭대학교 생산기반기술연구소 2003 생산기반기술연구소 논문집 Vol.3 No.1
The erosion behavior of artificially aged HK40 steel was invested. Erosion tests were conducted at room temperature, 200℃ and 400℃ using Al_2O_3 particles. Erosion rates increased with the increment of temperature. The maximum erosion rate appeared with the impingement angle of 30 degree. The erosion rate increased, reached the maximum at 1000 hours, and after that, decreased with the heat treatment time. The mechanism of erosion seems to be the cutting wear which is very much associated with the strength of material. As results, the erosion rates were rather affected by the tensile strength and the strain hardening coefficient than the hardness and the yield strength. Such changes of material properties would be caused by the change of micro-structure due to the precipitation of carbide and the dissolution of solid element within matrix during the heat treatment.
金正默,林聖愛,李來華,金炳斗,安禹洪,李敏炯,金基學 慶北大學校 師範大學 1977 敎育硏究誌 Vol.19 No.-
The following conclusion has been derived from the foregoing results of analysis and observation. First, we found, in this proposed system, reliability, objecivity, and individuality. Second, this type of system must be able to measure numerable testees. Third, testees are regulated that they are brought to the same condition in which their willful adventage are not allowed, Fourth, when considering the foundamental physical strength and skills can be evaluated in general throughout all skills areas of physical education, the following items of skills are recognized to have the advantages and disadvantages which relatively lack or relieve one another. However, under various conditions of the prevailing system of the entrance physical test, the following measurable items of physical skills selected are concluded as having highest validity primarily for the physical entrance examination. 1. Side Step B Style 2. Zigzag Run 3. Wall Pass 4. Standing Long Jump
Ahn, Byung Du,Jeon, Hye Ji,Park, Jin-Seong American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.12
<P>This paper addressed the effect of gallium nitrate hydrate addition on thin film transistor (TFT) performance and positive bias stability of amorphous zinc tin oxide (ZTO) TFTs by solution processing, Further, the mechanisms responsible for chemical properties and electronic band structure are explored. A broad exothermic peak accompanied by weight loss appeared in the range from about 350 to 570 °C for the ZTO solution; the thermal reaction of the Ga-ZTO:N solution was completed at 520 °C. This is because the gallium nitrate hydrate precursor promoted the decomposition and dehydroxylation reaction for Zn(CH<SUB>3</SUB>COO)<SUB>2</SUB>·2H<SUB>2</SUB>O and/or SnCl<SUB>2</SUB>·2H<SUB>2</SUB>O precursors. The concentrations of carbon and chloride in gallium nitrate hydrate added ZTO films annealed at 400 °C have a lower value (C 0.65, Cl 0.65 at. %) compared with those of ZTO films (C 3.15, Cl 0.82 at. %). Absorption bands at 416, 1550, and 1350 cm<SUP>–1</SUP> for GaZTO:N films indicated the presence of ZnGa<SUB>2</SUB>O<SUB>4,</SUB> N–H, and NO groups by Fourier transform infrared spectroscopy measurement, respectively. As a result, an inverted staggered Ga-ZTO:N TFT exhibited a mobility of 4.84 cm<SUP>2</SUP> V<SUP>–1</SUP> s<SUP>–1</SUP> in the saturation region, a subthreshold swing of 0.35 V/decade, and a threshold gate voltage (<I>V</I><SUB>th</SUB>) of 0.04 V. In addition, the instability of <I>V</I><SUB>th</SUB> values of the ZTO TFTs under positive bias stress conditions was suppressed by adding Ga and N from 13.6 to 3.17 V, which caused a reduction in the oxygen-related defects located near the conduction band.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-12/am5013672/production/images/medium/am-2014-013672_0010.gif'></P>
Byung Du Ahn,Hyun-Suk Kim,You Seung Rim,Jin-Seong Park,Hyun Jae Kim Institute of Electrical and Electronics Engineers 2014 IEEE transactions on electron devices Vol. No.
<P>The effects of oxygen high-pressure annealing (O<SUB>2</SUB> HPA) on the performance and instability of amorphous Ge-In-Ga-O (a-GIGO) thin-film transistors (TFTs) were examined. The TFTs with HPA under 30 atm O<SUB>2</SUB> ambient exhibited consistently better stability against the applied temperature stress and positive gate bias stress. We demonstrate that the superior stability of the HPA-treated device can be correlated with the evolution of electronic structure in a-GIGO thin films, as measured by spectroscopic ellipsometry, which reveals the significantly reduced band edge states below the conduction band by the O<SUB>2</SUB> HPA treatment. Based on the Meyer-Neldel rule, the total density of subgap states energy distribution, including the interfacial and semiconductor bulk trap densities, was also extracted and compared, which can support the experimental observation.</P>
Ahn, Byung Du,Kim, Hyun-Suk,Yun, Dong-Jin,Park, Jin-Seong,Kim, Hyun Jae The Electrochemical Society 2014 ECS journal of solid state science and technology Vol.3 No.5
<P>The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H<SUB>2</SUB>O vapor-assisted high-pressure O<SUB>2</SUB> atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O<SUB>2</SUB> or air. Annealing under high-pressure O<SUB>2</SUB> in the presence of H<SUB>2</SUB>O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(E<SUB>C</SUB>–E<SUB>F</SUB>)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.</P>